Article

Kho, ECT and Hoelke, AD and Pilkington, SJ and Pal, DK and Wan Zainal Abidin, WA and Ng, LY and Antoniou, M and Udrea, F (2012) 200-V Lateral Superjunction LIGBT on Partial SOI. IEEE Electron Device Letters. ISSN 0741-3106

Kho, ECT and Hoelke, AD and Pilkington, SJ and Pal, DK and Wan Zainal Abidin, WA and Ng, LY and Antoniou, M and Udrea, F (2012) 200-V lateral superjunction LIGBT on partial SOI. IEEE Electron Device Letters, 33. pp. 1291-1293. ISSN 0741-3106

Hsieh, AP-S and Udrea, F and Lin, W-C (2012) 700V smart trench IGBT with monolithic over-voltage and over-current protecting functions. Proceedings of the International Symposium on Power Semiconductor Devices and ICs. pp. 61-64. ISSN 1063-6854

Antoniou, M and Udrea, F and Tee, EKC and Pilkington, S and Pal, DK and Hoelke, A (2012) Compact three-dimensional silicon termination solutions for high voltage SOI SuperJunction. Proceedings of the International Symposium on Power Semiconductor Devices and ICs. pp. 89-92. ISSN 1063-6854

Wang, X and Zhang, Y and Haque, MS and Teo, KBK and Mann, M and Unalan, HE and Warburton, PA and Udrea, F and Milne, WI (2012) Deposition of carbon nanotubes on CMOS. IEEE Transactions on Nanotechnology, 11. pp. 215-219. ISSN 1536-125X

Wang, X and Zhang, Y and Haque, MS and Teo, KBK and Mann, M and Unalan, HE and Warburton, PA and Udrea, F and Milne, WI (2012) Deposition of carbon nanotubes on CMOS. IEEE Transactions on Nanotechnology, 11. pp. 215-219. ISSN 1536-125X

Lophitis, N and Antoniou, M and Udrea, F and Nistor, I and Arnold, M and Wikström, T and Vobecky, J (2012) Experimentally validated three dimensional GCT wafer level simulations. Proceedings of the International Symposium on Power Semiconductor Devices and ICs. pp. 349-352. ISSN 1063-6854

Luo, X and Lei, TF and Wang, YG and Yao, GL and Jiang, YH and Zhou, K and Wang, P and Zhang, ZY and Fan, J and Wang, Q and Ge, R and Zhang, B and Li, Z and Udrea, F (2012) Low on-resistance SOI dual-trench-gate MOSFET. IEEE Transactions on Electron Devices, 59. pp. 504-509. ISSN 0018-9383

Antoniou, M and Udrea, F and Bauer, F and Mihaila, A and Nistor, I (2012) Point injection in trench insulated gate bipolar transistor for ultra low losses. Proceedings of the International Symposium on Power Semiconductor Devices and ICs. pp. 21-24. ISSN 1063-6854

Bauer, F and Nistor, I and Mihaila, A and Antoniou, M and Udrea, F (2012) Superjunction IGBT Filling the Gap Between SJ MOSFET and Ultrafast IGBT. IEEE Electron Device Letters. ISSN 0741-3106

Bauer, F and Nistor, I and Mihaila, A and Antoniou, M and Udrea, F (2012) Superjunction IGBT filling the gap between SJ MOSFET and ultrafast IGBT. IEEE Electron Device Letters, 33. pp. 1288-1290. ISSN 0741-3106

Hsu, WC-W and Udrea, F and Chang, W and Chen, M (2012) A fast 600-V Tandem PiN Schottky (TPS) rectifier with ultra-low on-state voltage. Proceedings of the International Symposium on Power Semiconductor Devices and ICs. pp. 377-380. ISSN 1063-6854

Antoniou, M and Udrea, F and Bauer, F and Mihaila, A and Nistor, I (2011) Towards Achieving the Soft-Punch-Through Superjunction Insulated-Gate Bipolar Transistor Breakdown Capability. IEEE ELECTR DEVICE L, 32. pp. 1275-1277. ISSN 0741-3106

Guedon, F and Singh, SK and McMahon, RA and Udrea, F (2011) Gate driver for SiC JFETs with protection against normally-on behaviour induced fault. ELECTRON LETT, 47. pp. 375-376. ISSN 0013-5194

Antoniou, M and Udrea, F and Bauer, F and Nistor, I (2011) The Soft Punchthrough plus Superjunction Insulated Gate Bipolar Transistor: A High Speed Structure With Enhanced Electron Injection. IEEE T ELECTRON DEV, 58. pp. 769-775. ISSN 0018-9383

Luo, XR and Yao, GL and Chen, X and Wang, Q and Ge, R and Udrea, F (2011) Ultra-low on-resistance high voltage (> 600 V) SOI MOSFET with a reduced cell pitch. CHINESE PHYS B, 20. -. ISSN 1674-1056

Luo, XR and Fan, J and Wang, YG and Lei, TF and Qiao, M and Zhang, B and Udrea, F (2011) Ultralow Specific On-Resistance High-Voltage SOI Lateral MOSFET. IEEE ELECTR DEVICE L, 32. pp. 185-187. ISSN 0741-3106

Camuso, G and Udrea, F and Napoli, E and Luo, X (2011) Design and optimization of a 250nm SOI LDMOSFET. Proceedings of the International Semiconductor Conference, CAS, 2. pp. 313-316.

Gardner, JW and Ahmed, T and Moseley, PT and Ali, SZ and Chowdhury, MF and Udrea, F (2011) High temperature robust SOI ethanol sensor. Procedia Engineering, 25. pp. 1317-1320. ISSN 1877-7058

Hsieh, AP-S and Udrea, F and Lin, W-C (2011) Integrated avalanche diode for 600 v Trench IGBT over-voltage protection. Proceedings of the International Semiconductor Conference, CAS, 2. pp. 309-312.

Luo, X and Lei, TF and Wang, YG and Yao, GL and Jiang, YH and Zhou, K and Wang, P and Zhang, ZY and Fan, J and Wang, Q and Ge, R and Zhang, B and Li, Z and Udrea, F (2011) Low on-Resistance SOI Dual-Trench-Gate MOSFET. IEEE Transactions on Electron Devices. ISSN 0018-9383

Udrea, F and Trajkovic, T and Amaratunga, G (2011) Spinning off a semiconductor company from University premises -The story of Camsemi. Proceedings of the International Semiconductor Conference, CAS, 1. pp. 3-10.

Lophitis, N and Antoniou, M and Udrea, F and Wikstrom, T and Nistor, I (2011) Turn-off failure mechanism in large area IGCTs. Proceedings of the International Semiconductor Conference, CAS, 2. pp. 361-364.

Guha, PK and Santra, S and Covington, JA and Udrea, F and Gardner, JW (2011) Zinc oxide nanowire based hydrogen sensor on SOI CMOS platform. Procedia Engineering, 25. pp. 1473-1476. ISSN 1877-7058

Ali, SZ and Ho, WO and Chowdhury, MF and Covington, JA and Moseley, P and Saffell, J and Gardner, JW and Udrea, F (2011) A high temperature SOI CMOS NO 2 sensor. AIP Conference Proceedings, 1362. pp. 53-54. ISSN 0094-243X

Santra, S and Udrea, F and Guha, PK and Ali, SZ and Haneef, I (2010) Ultra-high temperature (> 300 degrees C) suspended thermodiode in SOI CMOS technology. MICROELECTRON J, 41. pp. 540-546. ISSN 0026-2692

Luo, XR and Wang, YG and Deng, H and Udrea, F (2010) A novel partial silicon on insulator high voltage LDMOS with low-k dielectric buried layer. CHINESE PHYS B, 19. -. ISSN 1674-1056

Bawedin, M and Uren, MJ and Udrea, F (2010) DRAM concept based on the hole gas transient effect in a AlGaN/GaN HEMT. SOLID STATE ELECTRON, 54. pp. 616-620. ISSN 0038-1101

Antoniou, M and Udrea, F and Bauer, F and Nistor, I (2010) The Semi-Superjunction IGBT. IEEE ELECTR DEVICE L, 31. pp. 591-593. ISSN 0741-3106

Park, SJ and Park, J and Lee, HY and Moon, SE and Park, KH and Kim, J and Maeng, S and Udrea, F and Milne, WI and Kim, GT (2010) High sensitive NO2 gas sensor with low power consumption using selectively grown ZnO nanorods. J Nanosci Nanotechnol, 10. pp. 3385-3388. ISSN 1533-4880

Santra, S and Guha, PK and Ali, SZ and Haneef, I and Udrea, F (2010) Silicon on Insulator Diode Temperature Sensor-A Detailed Analysis for Ultra-High Temperature Operation. IEEE SENS J, 10. pp. 997-1003. ISSN 1530-437X

Santra, S and Guha, PK and Ali, SZ and Hiralal, P and Unalan, HE and Covington, JA and Amaratunga, GAJ and Milne, WI and Gardner, JW and Udrea, F (2010) ZnO nanowires grown on SOI CMOS substrate for ethanol sensing. SENSOR ACTUAT B-CHEM, 146. pp. 559-565. ISSN 0925-4005

Antoniou, M and Udrea, F and Bauer, F (2010) Robustness of Super Junction structures against cosmic ray induced breakdown. SOLID STATE ELECTRON, 54. pp. 385-391. ISSN 0038-1101

Hopper, RH and Haneef, I and Ali, SZ and Udrea, F and Oxley, CH (2010) Use of carbon micro-particles for improved infrared temperature measurement of CMOS MEMS devices. MEAS SCI TECHNOL, 21. -. ISSN 0957-0233

Antoniou, M and Udrea, F and Bauer, F (2010) The Superjunction Insulated Gate Bipolar Transistor Optimization and Modeling. IEEE T ELECTRON DEV, 57. pp. 594-600. ISSN 0018-9383

Santra, S and Ali, SZ and Guha, PK and Zhong, G and Robertson, J and Covington, JA and Milne, WI and Gardner, JW and Udrea, F (2010) Post-CMOS wafer level growth of carbon nanotubes for low-cost microsensors--a proof of concept. Nanotechnology, 21. 485301-.

Gardner, JW and Guha, PK and Udrea, F and Covington, JA (2010) CMOS Interfacing for Integrated Gas Sensors: A Review. IEEE SENS J, 10. pp. 1833-1848. ISSN 1530-437X

Luo, XR and Zhang, B and Lei, TF and Li, ZJ and Xiao, ZQ and Hsu, WCW and Udrea, F (2010) Numerical and Experimental Investigation on a Novel High-Voltage (> 600-V) SOI LDMOS in a Self-Isolation HVIC. IEEE T ELECTRON DEV, 57. pp. 3033-3043. ISSN 0018-9383

Hopper, RH and Haneef, I and Ali, SZ and Udrea, F and Oxley, CH (2010) Improved infrared thermal imaging of a CMOS MEMS device. 16th International Workshop on Thermal Investigations of ICs and Systems, THERMINIC 2010. pp. 122-126.

Luo, X and Udrea, F and Wang, Y and Yao, G and Liu, Y (2010) Partial soi power LDMOS with a variable low-kappa; Dielectric buried layer and a buried P layer. IEEE Electron Device Letters, 31. pp. 594-596. ISSN 0741-3106

Haneef, I and Burzo, M and Ali, SZ and Komarov, P and Udrea, F and Raad, PE (2010) Thermal characterization of SOI CMOS micro hot-plate gas sensors. 16th International Workshop on Thermal Investigations of ICs and Systems, THERMINIC 2010. pp. 101-104.

Iwaki, T and Covington, JA and Udrea, F and Gardner, JW (2009) Identification and quantification of different vapours using a single polymer chemoresistor and the novel dual transient temperature modulation technique. SENSOR ACTUAT B-CHEM, 141. pp. 370-380. ISSN 0925-4005

Wang, H and Napoli, E and Udrea, F (2009) Breakdown Voltage for Superjunction Power Devices With Charge Imbalance: An Analytical Model Valid for Both Punch Through and Non Punch Through Devices. IEEE T ELECTRON DEV, 56. pp. 3175-3183. ISSN 0018-9383

Wang, H and Napoli, E and Udrea, F (2009) Breakdown voltage for superjunction power devices with charge imbalance: An analytical model valid for both punch through and non punch through devices. IEEE Transactions on Electron Devices, 56. pp. 3175-3183. ISSN 0018-9383

Bawedin, M and Cristoloveanu, S and Flandre, D and Udrea, F (2009) Floating-body SOI memory: Concepts, physics and challenges. ECS Transactions, 19. pp. 243-256. ISSN 1938-5862

Brezeanu, G and Brezeanu, M and Boianceanu, C and Udrea, F and Amaratunga, GAJ and Godignon, P (2009) Impact of high-k dielectrics on breakdown performances of SiC and diamond Schottky diodes. Materials Science Forum, 600-60. pp. 983-986. ISSN 0255-5476

Iwaki, T and Covington, JA and Gardner, JW and Udrea, F (2009) Novel dual transient temperature modulation technique for multi-vapour detection. TRANSDUCERS 2009 - 15th International Conference on Solid-State Sensors, Actuators and Microsystems. pp. 592-595.

Milne, WI and Santra, S and Udrea, F and Ali, SZ and Guha, PK and Vieira, SMC and Maeng, SL and Gardner, JW (2009) SOI CMOS platform for gas sensing applications. ECS Transactions, 22. pp. 281-292. ISSN 1938-5862

Malhan, RK and Rashid, SJ and Kataoka, M and Takeuchi, Y and Sugiyama, N and Udrea, F and Amaratunga, GAJ and Reimann, T (2009) Switching performance of epitaxially grown normally-off 4H-SiC JFET. Materials Science Forum, 600-60. pp. 1067-1070. ISSN 0255-5476

Maeng, S and Moon, S and Kim, S and Lee, HY and Park, SJ and Kwak, JH and Park, KH and Park, J and Choi, Y and Udrea, F and Milne, WI and Lee, BY and Lee, M and Hong, S (2008) Highly sensitive NO2 sensor array based on undecorated single-walled carbon nanotube monolayer junctions. APPL PHYS LETT, 93. -. ISSN 0003-6951

Maeng, S and Guha, P and Udrea, F and Ali, SZ and Santra, S and Gardner, J and Park, J and Kim, SH and Moon, SE and Park, KH and Kim, JD and Choi, Y and Milne, WI (2008) SOICMOS-based smart gas sensor system for ubiquitous sensor networks. ETRI J, 30. pp. 516-525. ISSN 1225-6463

Napoli, E and Wang, H and Udrea, F (2008) The effect of charge imbalance on superjunction power devices: An exact analytical solution. IEEE ELECTR DEVICE L, 29. pp. 249-251. ISSN 0741-3106

Ali, SZ and Udrea, F and Milne, WI and Gardner, JW (2008) Tungsten-Based SOI Microhotplates for Smart Gas Sensors. J MICROELECTROMECH S, 17. pp. 1408-1417. ISSN 1057-7157

Haque, MS and Ali, SZ and Guha, PK and Oei, SP and Park, J and Maeng, S and Teo, KB and Udrea, F and Milne, WI (2008) Growth of carbon nanotubes on fully processed silicon-on-insulator CMOS substrates. J Nanosci Nanotechnol, 8. pp. 5667-5672. ISSN 1533-4880

Iqbal, MMH and Hong, Y and Garg, P and Udrea, F and Migliorato, P and Fonash, SJ (2008) The Nanoscale Silicon Accumulation-Mode MOSFET-A Comprehensive Numerical Study. IEEE T ELECTRON DEV, 55. pp. 2946-2959. ISSN 0018-9383

Rashid, SJ and Tajani, A and Twitchen, DJ and Coulbeck, L and Udrea, F and Butler, T and Rupesinghe, NL and Brezeanu, M and Isberg, J and Garraway, A and Dixon, M and Balmer, RS and Chamund, D and Taylor, P and Amaratunga, GAJ (2008) Numerical Parameterization of Chemical-Vapor-Deposited (CVD) Single-Crystal Diamond for Device Simulation and Analysis. IEEE T ELECTRON DEV, 55. pp. 2744-2756. ISSN 0018-9383

Haque, MS and Teo, KB and Rupensinghe, NL and Ali, SZ and Haneef, I and Maeng, S and Park, J and Udrea, F and Milne, WI (2008) On-chip deposition of carbon nanotubes using CMOS microhotplates. Nanotechnology, 19. 025607-. ISSN 0957-4484

Azar, R and Udrea, F and Ng, WT and Dawson, F and Findlay, W and Waind, P (2008) The current sharing optimization of paralleled IGBTs in a power module tile using a PSpice frequency dependent impedance model. IEEE T POWER ELECTR, 23. pp. 206-217. ISSN 0885-8993

Haneef, I and Coull, JD and Ali, SZ and Udrea, F and Hodson, HP (2008) Laminar to turbulent flow transition measurements using an array of SOI-CMOS MEMS wall shear stress sensors. Proceedings of IEEE Sensors. pp. 57-61.

Lu, C-C and Liao, K-H and Udrea, F and Covington, JA and Gardner, JW (2008) Multi-field simulations and characterization of CMOS-MEMS high-temperature smart gas sensors based on SOI technology. Journal of Micromechanics and Microengineering, 18. ISSN 0960-1317

Santra, S and Guha, PK and Ali, SZ and Haneef, I and Udrea, F and Gardner, JW (2008) SOI diode temperature sensor operated at ultra high temperatures-a critical analysis. Proceedings of IEEE Sensors. pp. 78-81.

Rashid, SJ and Udrea, F and Twitchen, DJ and Balmer, RS and Amaratunga, GAJ (2008) Single crystal diamond schottky diodes - Practical design considerations for enhanced device performance. IET Seminar Digest, 2008.

Antoniou, M and Udrea, F and Bauer, F (2008) Spice modelling of the superjunction IGBT. IET Seminar Digest, 2008.

Fonasha, SJ and Iqbal, MH and Udrea, F and Migliorato, P (2007) Numerical modeling study of the unipolar accumulation transistor. APPL PHYS LETT, 91. -. ISSN 0003-6951

Vieira, SMC and Beecher, P and Haneef, I and Udrea, F and Milne, WI and Namboothiry, MAG and Carroll, DL and Park, J and Maeng, S (2007) Use of nanocomposites to increase electrical "gain" in chemical sensors. APPL PHYS LETT, 91. -. ISSN 0003-6951

Brosselard, P and Tournier, D and Mihaila, A and Udrea, F and Rashid, SJ and Godignon, P and Amaratunga, GAJ and Millan, J (2007) Bidirectional current 4H-SiC VJFET. Physica Status Solidi C, 4. pp. 1544-1547. ISSN 1610-1634

Johnson, CM and Buttay, C and Rashid, SJ and Udrea, F and Amaratunga, GAJ and Ireland, P and Malhan, RK (2007) Compact double-side liquid-impingement-cooled integrated power electronic module. Proceedings of the International Symposium on Power Semiconductor Devices and ICs. pp. 53-56. ISSN 1063-6854

Mihaila, AP and Udrea, F and Rashid, SJ and Amaratunga, GAJ and Kataoka, M and Takeuchi, Y and Malhan, RK (2007) Evaluation of termination techniques for 4H-SiC PiN diodes and trench JFETs. Materials Science Forum, 556-55. pp. 925-928. ISSN 0255-5476

Brezeanu, G and Avram, M and Brezeanu, M and Boianceanu, C and Udrea, F and Amaratunga, GAJ (2007) Fabrication of diamond based schottky barrier diodes with oxide ramp termination. Proceedings of the International Semiconductor Conference, CAS, 2. pp. 411-414.

Buttay, C and Johnson, CM and Rashid, J and Udrea, F and Amaratunga, GAJ and Tappin, P and Wright, N and Ireland, P and Yamamoto, T and Takeuchi, Y and Malhan, RK (2007) High temperature direct double side cooled inverter module for hybrid electric vehicle application. Materials Science Forum, 556-55. pp. 709-712. ISSN 0255-5476

Brezeanu, M and Butler, T and Rupesinghe, NL and Amaratunga, GAJ and Rashid, SJ and Udrea, F and Avram, M and Brezeanu, G (2007) Ramp oxide termination structure using high-k dielectrics for high voltage diamond Schottky diodes. Diamond and Related Materials, 16. pp. 1020-1024. ISSN 0925-9635

Brezeanu, M and Butler, T and Rupesinghe, NL and Amaratunga, GAJ and Rashid, SJ and Udrea, F and Avram, M and Brezeanu, G (2007) Ramp oxide termination structure using high-k dielectrics for high voltage diamond Schottky diodes. Diamond and Related Materials, 16. pp. 1020-1024. ISSN 0925-9635

Antoniou, M and Udrea, F (2007) Simulated superior performance of superjuction bipolar transistors. Proceedings of the International Semiconductor Conference, CAS, 2. pp. 291-296.

Park, J and Huh, J and Ali, SZ and Udrea, F and Gardner, JW and Kim, G-T and Maeng, S and Milne, WI (2007) Smart chemical sensor application of ZnO nanowires grown on CMOS compatible SOI microheater platform. 2007 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2007, Technical Proceedings, 1. pp. 418-421.

Iqbal, MM and Udrea, F (2007) Technology-based Figure of Merit (FOM) for high voltage LDMOSFETs - proof of value of SOI in power ICs. Proceedings - IEEE International SOI Conference. pp. 57-58. ISSN 1078-621X

Gamage, SSHU and Pathirana, V and Udrea, F (2006) Electrothermal model for an SOI-based LIGBT. IEEE T ELECTRON DEV, 53. pp. 1698-1704. ISSN 0018-9383

Pathirana, V and Napoli, E and Udrea, F and Gamage, S (2006) An analytical model for the lateral insulated gate bipolar transistor (LIGBT) on thin SOI. IEEE T POWER ELECTR, 21. pp. 1521-1528. ISSN 0885-8993

Rashid, SJ and Tajani, A and Coulbeck, L and Brezeanu, M and Garraway, A and Butler, T and Rupesinghe, NL and Twitchen, DJ and Amaratunga, GAJ and Udrea, F (2006) Modelling of single-crystal diamond Schottky diodes for high-voltage applications. Diamond and Related Materials, 15. pp. 317-323. ISSN 0925-9635

Malhan, RK and Takeeuchi, M and Kataoka, M and Mihaila, A and Rashid, SJ and Udrea, F and Amaratunga, GAJ (2006) Normally-off trench JFET technology in 4H silicon carbide. Microelectronic Engineering, 83. pp. 107-111. ISSN 0167-9317

Mihalia, A and Udrea, F and Rashid, SJ and Takeuchi, Y and Katoaka, M and Malhan, RK (2006) SiC junction-controlled transistors silicon carbide. Microelectronic Engineering, 83. pp. 176-180. ISSN 0167-9317

Ravariu, C and Rusu, A and Udrea, F and Ravariu, F (2006) Simulations results of some diamond on insulator nano-MISFETs. Diamond and Related Materials, 15. pp. 777-782. ISSN 0925-9635

Napoli, E and Udrea, F (2006) Substrate engineering for improved transient breakdown voltage in SOI lateral power MOS. IEE Electron Device Letters, 27. pp. 678-680. ISSN 0741-3106

Brezeanu, M and Badila, M and Brezeanu, G and Udrea, F and Boianceanu, C and Amaratunga, GAJ and Zekentes, K (2006) Theoretical study of an effective field plate termination for SiC devices based on high-k dielectrics. Material Science Forum, 527-52. pp. 1087-1090. ISSN 0255-5476

Udugampola, NK and McMahon, RA and Amaratunga, GAJ (2005) Analysis and design of the dual-gate inversion layer emitter transistor. IEEE Transactions on Electron Devices, 52. pp. 99-105. ISSN 0018-9383

Iwaki, T and Covington, JA and Udrea, F and Ali, SZ and Guha, PK and Gardner, JW (2005) Design and simulation of resistive SOI CMOS micro-heaters for high temperature gas sensors. Journal of Physics: Conference Series, 15. pp. 27-32. ISSN 1742-6588

Napoli, E and Pathirana, V and Udrea, F (2005) Modeling voltage derivative during inductive turnoff in thin SOI LIGBT. IEEE Transactions on Electron Devices, 52. pp. 2776-2783. ISSN 0018-9383

Udrea, F and Trajkovic, T and Amaratunga, GAJ (2005) More oomph. European Semiconductor, 27. pp. 33-34. ISSN 0265-6027

Brezeanu, M and Rashid, SJ and Butler, T and Rupesinghe, NL and Udrea, F and Okano, K and Amaratunga, GAJ and Twitchen, DJ and Tajani, A and Wort, C (2005) Optically triggered Schottky barrier diodes in single crystal diamond. Diamond and Related Materials, 14. pp. 499-503. ISSN 0925-9635

Brezeanu, G and Boianceanu, C and Brezeanu, M and Mihalia, A and Udrea, F and Amaratunga, GAJ (2005) Performance of SiC cascode switches with Si MOS gate. Material Science Forum, 483-48. pp. 825-828. ISSN 0255-5476

Azar, R and Udrea, F and Ng, WT and Dawson, F and Findlay, W and Waind, P and Amaratunga, GAJ (2004) Advanced electro-thermal SPICE modelling of large power IGBTs. IEE Proceedings - Circuits, Devices and Systems, 151. pp. 249-254. ISSN 1350-2409

Udugampola, UNK and McMahon, RA and Udrea, F and Sheng, K and Amaratunga, GAJ and Narayanan, EMS and Hardikar, S (2004) Dual gate lateral inversion layer emitter transistor for power and high voltage integrated circuits. IEE Proceedings - Circuits, Devices and Systems, 151. pp. 203-206. ISSN 1350-2409

Fritschi, R and Frédérico, S and Hibert, C and Flückiger, P and Renaud, P and Tsamados, D and Boussey, J and Chovet, A and Ng, RKM and Udrea, F and Curty, J-P and Dehollain, C and Declercq, M and Ionescu, AM (2004) High tuning range AlSi RF MEMS capacitors fabricated with sacrificial amorphous silicon surface micromachining. Microelectronic Engineering, 73-74. pp. 447-451. ISSN 0167-9317

Huang, S and Udrea, F and Amaratunga, GAJ (2003) A comparative investigation of the MCST with MCT and IGBT. Solid State Electronics, 47. pp. 1429-1436. ISSN 0038-1101

Yokoyama, Y and Li, X and Sheng, K and Mihaila, A and Traikovic, T and Udrea, F and Amaratunga, GAJ and Okano, K (2003) A field effect transistor using highly nitrogen-doped CVD diamond for power device applications. Applied Surface Science, 216. pp. 483-489. ISSN 0169-4332

Yokoyama, Y and Li, X and Sheng, K and Mihaila, A and Traikovic, T and Udrea, F and Amaratunga, GAJ and Okano, K (2003) A field effect transistor using highly nitrogen-doped CVD diamond for power device applications. Applied Surface Science, 216. pp. 483-489. ISSN 0169-4332

Mihaila, A and Udrea, F and Brezeanu, G and Amaratunga, GAJ (2003) A numerical comparison between MOS control and junction control high voltage devices in SiC technology. Solid State Electronics, 47. pp. 607-615. ISSN 0038-1101

Yuan, XL and Udrea, F and Coulbeck, L and Waind, P and Amaratunga, G (2002) On-state analytical modeling of IGBTs with local lifetime control. IEEE T POWER ELECTR, 17. pp. 815-823. ISSN 0885-8993

Pathirana, GPV and Udrea, F (2002) High performance RF power MOSFET. ELECTRON LETT, 38. pp. 1286-1288. ISSN 0013-5194

Yuan, X and Udrea, F and Coulbeck, L and Waind, PR and Amaratunga, GAJ (2002) Analysis of lifetime control in high-voltage IGBTs. Solid State Electronics, 46. pp. 75-81. ISSN 0038-1101

Popescu, A and Udrea, F and Ng, R and Milne, WI (2002) Analytical modelling for the RESURF effect in JI and SOI power devices. IEEE Proceedings on Circuits Devices and Systems, 149. pp. 273-284. ISSN 1350-2409

Popescu, A and Udrea, F and Ng, R and Milne, WI (2002) Analytical modelling for the RESURF effect in JI and SOI power devices. IEE Proceedings, Circuits, Devices and Systems, 149. pp. 273-284. ISSN 1350-2409

Udrea, F and Udugampola, UNK and Sheng, K and Mcmahon, RA and Amaratunga, GAJ and Narayanan, EMS and De Souza, MM and Hardikar, S (2002) Experimental demonstration of an ultra-fast double gate inversion layer emitter transistor. IEEE Electron Device Letters, 23. pp. 725-727. ISSN 0741-3106

Yuan, X and Trajkovic, T and Udrea, F and Thomson, J and Waind, PR and Taylor, P and Amaratunga, GAJ (2002) Suppression of parasitic JFET effect in trench IGBTs by using a self-aligned p base process. Solid State Electronics, 46. pp. 1907-1912. ISSN 0038-1101

Huang, S and Amaratunga, GAJ and Udrea, F (2002) The injection efficiency controlled IGBT. IEE Electron Device Letters, 23. pp. 88-90. ISSN 0741-3106

Udrea, F and Gardner, JW and Setiadi, D and Covington, JA and Dogaru, T and Lu, CC and Milne, WI (2001) Design and simulations of SOI CMOS micro-hotplate gas sensors. Sensors and Actuators B: Chemical, 78. pp. 180-190. ISSN 0925-4005

Ionicioiu, R and Amaratunga, GAJ and Udrea, F (2001) Quantum computation with ballistic electrons. International Journal of Modern Physics B, 15. pp. 125-133. ISSN 0217-9792

Huang, S and Sheng, K and Amaratunga, GAJ and Udrea, F (2001) A dynamic n-buffer insulated gate bipolar transistor. Solid-State Electronics, 45. pp. 173-182. ISSN 0038-1101

Brezeanu, M and Badila, M and Tudor, B and Milan, J and Godignon, SJ and Udrea, F and Amaratunga, GAJ and Mihaila, A (2001) Accurate modeling and parameter extraction for 6H-SiC Schottky barrier diodes (SBDs) with nearly ideal breakdown voltage. IEEE Transactions on Electron Devices, 48. pp. 2148-2153. ISSN 0018-9383

Lu, CC and Gardner, JW and Udrea, F (2001) Artificial olfaction and electronic nose technology. Instruments Today, 6. pp. 86-96.

Lu, C-C and Udrea, F and Gardner, JW and Setiadi, D and Dogaru, T and Tsai, TH and Covington, JA (2001) Design and coupled-effect simulations of CMOS micro gas-sensors built on SOI thin membranes. Proceedings of SPIE - The International Society for Optical Engineering, 4408. pp. 86-95. ISSN 0277-786X

Lu, CC and Gardner, JW and Udrea, F (2001) Design and development of SOI MOSFET micro gas sensors. Instruments Today, 5. pp. 76-90.

Udrea, F and Gardner, JW and Setiadi, D and Covington, JA and Dogaru, T and Lu, CC and Milne, WI (2001) Design and simulations of SOI CMOS micro-hotplate gas sensors. Sensors and Actuators, B: Chemical, 78. pp. 180-190. ISSN 0925-4005

Trajkovic, T and Udrea, F and Waind, PR and Thomson, J and Amaratunga, GAJ and Milne, WI (2001) Optimum design of 1.4 kV non-punch-through trench IGBTs: the next generation of high-power switching devices. IET Proceedings on Circuits Devices and Systems, 148. pp. 71-74. ISSN 1350-2409

Trajkovic, T and Udrea, F and Waind, PR and Thomson, J and Amaratunga, GAJ and Milne, WI (2001) Optimum design of 1.4 kV non-punch-through trench IGBTs: the next generation of high-power switching devices. I E T Circuits, Devices and Systems, 148. pp. 71-74. ISSN 1350-2409

Garner, DM and Udrea, F and Lim, HT and Ensell, G and Popescu, AE and Sheng, K and Milne, WI (2001) Silicon-on-insulator power integrated circuits. Microelectronics Journal, 32. pp. 517-526. ISSN 0026-2692

Huang, S and Amaratunga, GAJ and Udrea, F and Sheng, K and Waind, P and Coulbeck, L and Taylor, P (2001) A dual-channel IEGT. Microelectronics Journal, 32. pp. 755-761. ISSN 0026-2692

Huang, S and Amaratunga, GAJ and Udrea, F (2001) A novel single gate MOS controlled current saturated thyristor. IEE Electron Device Letters, 22. pp. 438-440. ISSN 0741-3106

Huang, S and Amaratunga, GAJ and Udrea, F (2001) A novel single gate MOS controlled current saturated thyristor. IEEE Electron Device Letters, 22. pp. 438-440. ISSN 0741-3106

Sheng, K and Udrea, F and Amaratunga, GAJ (2000) Optimum carrier distribution of the IGBT. Solid State Electronics, 44. pp. 1573-1583. ISSN 0038-1101

Garner, DM and Udrea, F and Lim, HT (2000) The integration of high-side and low-side LIGBTs on partial silicon-on-insulator. Solid State Electronics, 44. pp. 929-935. ISSN 0038-1101

Ng, R and Udrea, F and Amaratunga, G (2000) An analytical model for the 3D-RESURF effect. Solid State Electronics, 44. pp. 1753-1764. ISSN 0038-1101

Lu, C-C and Setiadi, D and Udrea, F and Milne, WI and Covington, JA and Gardner, JW (2000) 3D thermo-electro-mechanical simulations of gas sensors based on SOI membranes. 2000 International Conference on Modeling and Simulation of Microsystems - MSM 2000. pp. 297-300.

Huang, S and Amaratunga, GAJ and Udrea, F (2000) Analysis of SEB and SEGR in super-junction MOSFETs. IEEE Transactions on Nuclear Science, 47. pp. 2640-2647. ISSN 0018-9499

Huang, S and Amaratunga, GAJ and Udrea, F (2000) Analysis of SEB and SEGR in super-junction MOSFETs. IEEE Transactions on Nuclear Science, 47. pp. 2640-2647. ISSN 0018-9499

Ng, R and Udrea, F and Amaratunga, G (2000) Analytical model for the 3D-RESURF effect. Solid-State Electronics, 44. pp. 1753-1764. ISSN 0038-1101

Udrea, F and Garner, D and Sheng, K and Popescu, A and Lim, HT and Milne, WI (2000) SOI power devices. Electronics and Communication Engineering Journal, 12. pp. 27-40. ISSN 0954-0695

Garner, DM and Udrea, F and Lim, HT and Milne, WI (2000) The integration of high-side and low-side LIGBTs on partial silicon-on-insulator. Solid-State Electronics, 44. pp. 929-935. ISSN 0038-1101

Udrea, F and Chan, SSM and Thomson, S and Trajkovic, T and Waind, PR and Amaratunga, GAJ and Crees, DE (1999) 1.2 kV trench insulated gate bipolar transistors (IGBT's) with ultralow on-resistance. IEEE ELECTR DEVICE L, 20. pp. 428-430. ISSN 0741-3106

Ionicioiu, R and Amaratunga, G and Udrea, F (1999) Ballistic Single-Electron Quputer.

Lim, HT and Udrea, F and Garner, DM and Milne, WI (1999) Modelling of self-heating effect in thin SOI and Partial SOI LDMOS power devices. SOLID STATE ELECTRON, 43. pp. 1267-1280. ISSN 0038-1101

Trajkovic, T and Udrea, F and Amaratunga, GAJ and Milne, WI and Chan, SSM and Waind, PR and Thomson, J and Crees, DE (1999) Silicon MOS controlled bipolar power switching devices using trench technology. INT J ELECTRON, 86. pp. 1153-1168. ISSN 0020-7217

Garner, DM and Udrea, F and Lim, HT and Milne, WI (1999) An analytic model for turn off in the silicon-on-insulator LIGBT. SOLID STATE ELECTRON, 43. pp. 1855-1868. ISSN 0038-1101

Udrea, F and Waind, PR and Thomson, J and Trajkovic, T and Chan, SSM and Huang, S and Amaratunga, GAJ (1999) 1.4 kV, 25 A, PT and NPT Trench IGBTs with optimum forward characteristics. IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD). pp. 141-144.

Garner, DM and Udrea, F and Lim, HT and Milne, WI (1999) Analytic model for turn off in the silicon-on-insulator LIGBT. Solid-State Electronics, 43. pp. 1855-1868. ISSN 0038-1101

Trajkovic, T and Waind, PR and Thomson, J and Udrea, F and Yuan, X and Huang, S and Milne, WI and Amaratunga, GAJ and Crees, DE (1999) Optimum design of 1.4KV trench IGBTs - The next generation of high power switching devices. IEE Colloquium (Digest). pp. 53-56. ISSN 0963-3308

Mihaila, A and Udrea, F and Azar, R and Liang, J and Amaratunga, G and Rusu, A and Brezeanu, G (1999) Theoretical and numerical investigation of SiC JFET and MOSFET at 6.5 kV. Proceedings of the International Semiconductor Conference, CAS, 1. pp. 191-194.

Udrea, F and Popescu, A and Milne, WI (1998) 3D RESURF double-gate MOSFET: A revolutionary power device concept. ELECTRON LETT, 34. pp. 808-809. ISSN 0013-5194

Lim, HT and Udrea, F and Milne, W and Garner, D (1998) Switching speed enhancement of the LDMOSFETs using partial-SOI technology. IEEE International SOI Conference. pp. 53-54.

Udrea, F and Amaratunga, GAJ (1997) An on-state analytical model for the trench insulated gate bipolar transistor (TIGBT). SOLID STATE ELECTRON, 41. pp. 1111-1118. ISSN 0038-1101

Udrea, F and Milne, W and Popescu, A (1997) Lateral insulated gate bipolar transistor (LIGBT) structure based on partial isolation SOI technology. ELECTRON LETT, 33. pp. 907-909. ISSN 0013-5194

Udrea, F and Amaratunga, G (1997) The Trench insulated gate bipolar transistor - A high power switching device. MICROELECTR J, 28. pp. 1-12. ISSN 0026-2692

Udrea, F and Gardner, JW (1996) Design of a silicon microsensor array device for gas analysis. MICROELECTR J, 27. pp. 449-457. ISSN 0026-2692

Udrea, F and Amaratunga, GAJ and Humphrey, J and Clark, J and Evans, AGR (1996) The MOS inversion layer as minority carrier injector. IEEE ELECTR DEVICE L, 17. pp. 425-427. ISSN 0741-3106

UDREA, F and AMARATUNGA, CAJ (1995) THEORETICAL AND NUMERICAL COMPARISON BETWEEN DMOS AND TRENCH TECHNOLOGIES FOR INSULATED GATE BIPOLAR-TRANSISTORS. IEEE T ELECTRON DEV, 42. pp. 1356-1366. ISSN 0018-9383

UDREA, F and AMARATUNGA, GAJ and HUANG, Q (1994) THE EFFECT OF THE HOLE CURRENT ON THE CHANNEL INVERSION IN TRENCH INSULATED GATE BIPOLAR-TRANSISTORS (TIGBT) (VOL 37, PG 507, 1994). SOLID STATE ELECTRON, 37. R1-R1. ISSN 0038-1101

UDREA, F and AMARATUNGA, GAJ and HUANG, Q (1994) THE EFFECT OF THE HOLE CURRENT ON THE CHANNEL INVERSION IN TRENCH INSULATED GATE BIPOLAR-TRANSISTORS (TIGBT). SOLID STATE ELECTRON, 37. pp. 507-514. ISSN 0038-1101

UDREA, F and AMARATUNGA, GAJ (1994) ANALYSIS OF A MOS-CONTROLLABLE THYRISTOR UTILIZING AN INVERSION LAYER EMITTER. SOLID STATE ELECTRON, 37. pp. 1999-2002. ISSN 0038-1101

Conference or Workshop Item

Brezeanu, G and Draghici, F and Craciunioiu, F and Boianceanu, C and Bernea, F and Udrea, F and Puscasu, D and Rusu, I (2011) 4H-SiC Schottky Diodes for Temperature Sensing Applications in Harsh Environments. In: UNSPECIFIED pp. 575-578..

Gardner, JW and Ahmed, T and Moseley, PT and Ali, SZ and Chowdhury, MF and Udrea, F (2011) High Temperature Robust SOI Ethanol Sensor. In: UNSPECIFIED -..

Hsu, WCW and Udrea, F and Lin, PL and Lin, YY and Chen, M (2011) Innovative Designs Enable 300-V TMBS (R) with Ultra-low On-state Voltage and Fast Switching Speed. In: UNSPECIFIED pp. 80-83..

Antoniou, M and Udrea, F and Tee, EKC and Hao, Y and Pilkington, S and Yaw, KK and Pal, DK and Hoelke, A (2011) Interface Charge Trapping and Hot Carrier Reliability in High Voltage SOI SJ LDMOSFET. In: UNSPECIFIED pp. 336-339..

Guha, PK and Santra, S and Covington, JA and Udrea, F and Gardner, JW (2011) Zinc oxide nanowire based hydrogen sensor on SOI CMOS platform. In: UNSPECIFIED -..

Moon, SE and Lee, HY and Park, J and Lee, JW and Choi, NJ and Park, SJ and Kwak, JH and Park, KH and Kim, J and Cho, GH and Lee, TH and Maeng, S and Udrea, F and Milne, WI (2010) Low power consumption and high sensitivity carbon monoxide gas sensor using indium oxide nanowire. In: UNSPECIFIED pp. 3189-3192..

Bawedin, M and Cristoloveanu, S and Flandre, D and Udrea, F (2010) Dynamic body potential variation in FD SOI MOSFETs operated in deep non-equilibrium regime: Model and applications. In: UNSPECIFIED pp. 104-114..

Napoli, E and Wang, H and Udrea, F (2010) Analytical calculation of the breakdown voltage for balanced, symmetrical superjunction power devices. In: UNSPECIFIED pp. 205-208..

Luo, XR and Lei, TF and Wang, YG and Zhang, B and Udrea, F (2010) A Novel High Voltage SOI LDMOS with Buried N-layer in a Self-isolation High Voltage Integrated Circuit. In: UNSPECIFIED pp. 265-268..

Hsu, WCW and Udrea, F and Hsu, HY and Lin, WC (2010) Reverse-conducting Insulated Gate Bipolar Transistor with an Anti-parallel Thyristor. In: UNSPECIFIED pp. 149-152..

Antoniou, M and Udrea, F and Bauer, F and Nistor, I (2010) A new way to alleviate the RC IGBT snapback phenomenon: The SuperJunction Solution. In: UNSPECIFIED pp. 153-156..

Antoniou, M and Udrea, F and Bauer, F (2009) The 3.3kV Semi-SuperJunction IGBT for Increased Cosmic Ray Induced Breakdown Immunity. In: UNSPECIFIED pp. 168-171..

Hsu, WCW and Udrea, F and Chen, HT and Lin, WC (2009) ADVANCED CARRIER DENSITY ENHANCEMENT TECHNOLOGIES IN INSULATED GATE BIPOLAR TRANSISTORS. In: UNSPECIFIED pp. 393-396..

Santra, S and Ali, SZ and Guha, PK and Hiralal, P and Unalan, HE and Dalal, SH and Covington, JA and Milne, WI and Gardner, JW and Udrea, F (2009) CMOS Alcohol Sensor Employing ZnO Nanowire Sensing Films. In: UNSPECIFIED pp. 119-122..

Trajkovic, T and Udugampola, N and Pathirana, V and Mihaila, A and Udrea, F and Amaratunga, GAJ and Koutny, B and Ramkumar, K and Geha, S (2009) High Frequency 700V PowerBrane LIGBTs in 0.35 mu m Bulk CMOS Technology. In: UNSPECIFIED pp. 307-310..

Garofalo, V and Guha, PK and Ali, SZ and Santra, S and Chowdhury, MF and Napoli, E and Udrea, F (2009) MIXED SIGNAL TEMPERATURE CONTROL CIRCUIT FOR ON-CHIP CMOS GAS SENSOR. In: UNSPECIFIED pp. 495-498..

Udrea, F and Santra, S and Guha, PK and Ali, SZ and Covington, JA and Milne, WI and Gardner, JW and Maeng, S (2009) Nanotubes and Nanorods on CMOS Substrates for Gas Sensing. In: UNSPECIFIED pp. 19-26..

Ali, SZ and Santra, S and Haneef, I and Schwandt, C and Kumar, RV and Milne, WI and Udrea, F and Guha, PK and Covington, JA and Gardner, JW and Garofalo, V (2009) Nanowire Hydrogen Gas Sensor Employing CMOS Micro-hotplate. In: UNSPECIFIED pp. 114-117..

Hsu, WCW and Udrea, F and Chen, HT and Lin, WC (2009) A Novel Double-Gate Trench Insulated Gate Bipolar Transistor with Ultra-low On-state Voltage. In: UNSPECIFIED pp. 291-294..

Iqbal, MMH and Udrea, F and Napoli, E (2009) ON THE STATIC PERFORMANCE OF THE RESURF LDMOSFETS FOR POWER ICS. In: UNSPECIFIED pp. 247-250..

Hodson, HP and Haneef, I and Guha, PK and Ali, SZ and Coull, JD and Udrea, F (2008) SOI MEMS Anemometer with integrated CMOS electronics. In: 2nd Joint EVI-GTI / PIWG International Gas Turbine Instrumentation Conference, 24-9-2008 to 26-9-2008, Seville, Spain.

Haneef, I and Guha, PK and Ali, SZ and Coull, JD and Udrea, F and Hodson, HP (2008) SOI MEMS anemometer with CMOS integrated electronics. In: 2nd joint EVI-GTI 2008 / PIWG International Gas Turbine Instrumentation Conference, 24-9-2008 to 26-9-2008, Seville, Spain.

Haneef, I and Guha, PK and Ali, SZ and Coull, JD and Udrea, F and Hodson, HP (2008) SOI MEMS wall shear stress sensors with CMOS electronics. In: 22nd International Conference EUROSENSORS, 7-9-2008 to 10-9-2008, Dresden, Germany.

Haneef, I and Ali, SZ and Udrea, F and Coull, JD and Hodson, HP (2008) CMOS MEMS hot-film sensors. In: XIX Biannual Symposium on Measuring Techniques in Turbomachinery: Transonic and Supersonic Flow in Cascades and Turbomachines, 7-4-2008 to 8-4-2008, Sint Genesius Rode, Belgium.

Brezeanu, M and Butler, T and Amaratunga, GAJ and Udrea, F and Rupesinghe, N and Rashid, S (2008) On-state behaviour of diamond Schottky diodes. In: UNSPECIFIED pp. 736-740..

Haneef, I and Ali, SZ and Udrea, F and Coull, JD and Hodson, HP (2008) Laminar to turbulent flow transition measurements using an array of SOI-CMOS MEMS wall shear stress sensors. In: 7th IEEE Conference on Sensors, 26-10-2008 to 29-10-2008, Lecce, Italy.

Haneef, I and Coull, JD and Ali, SZ and Udrea, F and Hodson, HP (2008) Laminar to turbulent flow transition measurements using an array of SOI-CMOS MEMS wall shear stress sensors. In: 7th IEEE Conference on Sensors, 26-10-2008 to 29-10-2008, Lecce, Italy.

Udrea, F and Ali, SZ and Gardner, JW (2008) CMOS MICRO-HOTPLATE ARRAY DESIGN FOR NANOMATERIAL-BASED GAS SENSORS. In: UNSPECIFIED pp. 143-146..

Udrea, F and Santra, S and Gardner, JW (2008) CMOS TEMPERATURE SENSORS - CONCEPTS, STATE-OF-THE-ART AND PROSPECTS. In: UNSPECIFIED pp. 31-40..

Milne, WI and Wang, X and Zhang, Y and Haque, S and Kim, SM and Udrea, F and Robertson, J and Teo, KBK (2008) CMOS compatibility of Carbon Nanotubes? In: UNSPECIFIED pp. 105-107..

Rashid, SJ and Udrea, F and Twitchen, DJ and Balmer, RS and Amaratunga, GAJ (2008) High conductivity delta-doped single crystal diamond Schottky m-i p(+) diodes. In: UNSPECIFIED pp. 249-252..

Trajkovic, T and Udrea, F and Lee, C and Udugampola, N and Pathirana, V and Mihaila, A and Amaratunga, GAJ (2008) Thick silicon membrane technology for reliable and high performance operation of high voltage LIGBTs in Power ICs. In: UNSPECIFIED pp. 327-330..

Udrea, F and Santra, S and Guha, PK and Ali, SZ and Haneef, I (2008) Ultra-high temperature (> 300 degrees C) suspended thermodiode in SOI CMOS technology. In: UNSPECIFIED pp. 195-199..

Buttay, C and Rashid, SJ and Johnson, CM and Udrea, F and Amaratunga, GAJ and Ireland, P and Malhan, RK (2007) High performance cooling system for automotive inverters. In: 12th European Conference on Power Electronics and Applications, EPE' 07, 2007-9-2 to 2007-9-5, Aalborg, Denmark pp. 1-9..

Brezeanu, M and Butler, T and Rupesinghe, NL and Amaratunga, GAJ and Rashid, SJ and Udrea, F and Avram, M and Brezeanu, G (2007) Ramp oxide termination structure using high-k dielectrics for high voltage diamond Schottky diodes. In: 17th European Conference on Diamond, Diamond-Like Materials, Carbon Nanotubes, Nitrides and Silicon Carbide, -9-2006 to --, Estoril, Portugal pp. 1020-1024..

Vieira, SMC and Beecher, P and Haneef, I and Udrea, F and Milne, WI and Carroll, DL and Park, J and Maeng, S (2007) Development of high performance gas sensors using singlewalled carbon nanotubes, polymers and composite materials. In: 1st International Conference on Nanopolymers 2007, 2007-6-12 to 2007-6-13, Berlin, Germany.

Buttay, C and Rashid, SJ and Johnson, CM and Udrea, F and Amaratunga, GAJ and Ireland, P and Malhan, RK (2007) Compact inverter using Silicon carbide devices for high temperature environments. In: IEEE Power Electronics Society Conference, 2007-6- to --, Florida, USA.

Haque, MS and Oei, SP and Teo, KBK and Udrea, F and Gardner, JW and Milne, WI (2007) CMOS compatibility of carbon nanotubes on SOI devices. In: 2006 Nsti Nanotechnology Conference and Trade Show, 2006-- to --, Boston, MA, US pp. 138-141..

Johnson, CM and Buttay, C and Rashid, SJ and Udrea, F and Amaratunga, GAJ and Ireland, P and Malhan, RK (2007) Compact double-side liquid-impingement-cooled integrated power electronic module. In: International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2007-5-27 to 2007-5-30, Jeju Island, Korea.

Antoniou, M and Udrea, F and Bauer, F (2007) Optimisation of superjunction bipolar transistor for ultra-fast switching applications. In: International Symposium on Power Semiconductor Devices and ICs (ISPSD), 27-5-2007 to 30-5-2007, Jeju Island, Korea.

Udrea, F and Udugampola, UNK and Trajkovic, T and Amaratunga, GAJ (2007) Reverse conducting double gate lateral insulated gate bipolar transistor in SOI based technology. In: 19th International Symposium on Power Semiconductor Devices and ICs (ISPSD'07), 27-5-2007 to 30-5-2007, Jeju Island, South Korea pp. 221-224..

Park, J and Kim, G-T and Maeng, S and Udrea, F and Milne, WI (2007) Sensor application of ZnO nanowires on microheaters. In: Nanotechnology Conference and Trade Show, NANOTECH' 07, 2007-5-20 to 2007-5-24, Santa Clara, CA, USA pp. 418-421..

Brezeanu, M and Butler, T and Amaratunga, GAJ and Udrea, F and Rupesinghe, NL and Rashid, SJ (2007) On state behaviour of on-state Schottky diodes. In: New Diamond and Nano Carbons Conference (NDNC), 2007-5- to --, Osaka, Japan.

Haneef, I and Ali, SZ and Udrea, F and Coull, JD and Hodson, HP (2007) High performance SOI-CMOS wall shear stress sensors. In: IEEE Sensors, 28-10-2007 to 31-10-2007, Atlanta, GA, USA pp. 1060-1064..

Guha, PK and Ali, SZ and Lee, CCC and Udrea, F and Milne, WI and Iwaki, T and Covington, JA and Gardner, JW (2007) Novel design and characterisation of SOICMOS micro-hotplates for high temperature gas sensors. In: UNSPECIFIED pp. 260-266..

Brezeanu, M and Butler, T and Rupesinghe, N and Rashid, SJ and Avram, M and Amaratunga, GAJ and Udrea, F and Dixon, M and Twitchen, D and Garraway, A and Charnund, D and Taylor, P (2007) Single crystal diamond M-i-P diodes for power electronics. In: UNSPECIFIED pp. 380-386..

Udrea, F (2007) State-of-the-art technologies and devices for high-voltage integrated circuits. In: UNSPECIFIED pp. 357-365..

Buttay, C and Johnson, CM and Rashid, SJ and Udrea, F and Amaratunga, GAJ and Tappin, P and Wright, N and Ireland, P and Yamamoto, P and Takeuchi, Y (2007) High temperature direct double side cooled inverter module for hybrid electric vehicle application. In: 6th European Conference on Silicon Carbide and Related Materials (ECSCRM'06), 2005-9- to --, Newcastle uon Tyne, UK pp. 709-712..

Rashid, SJ and Johnson, CM and Udrea, F and Mihalia, A and Amaratunga, GAJ and Malhan, RK (2007) Analysis of novel packaging techniques for high power electronics in SiC. In: 16th European Conference on Diamond, Diamond-like Materials, Carbon Nanotubes, and Nitrides (Diamond 2005), -- to --.

Buttay, C and Rashid, J and Johnson, CM and Udrea, F and Amaratunga, G and Ireland, P and Malhan, RK (2007) Compact inverter designed for high-temperature operation. In: UNSPECIFIED pp. 2241-2247..

Brezeanu, G and Brezeanu, M and Udrea, F and Arnaratunga, G and Boianceanu, C and Badila, M and Zekentes, K and Visoreanu, A (2007) Comparison between Schottky diodes with oxide ramp termination on silicon carbide and diamond. In: UNSPECIFIED pp. 865-868..

Buttay, C and Rashid, J and Johnson, CM and Ireland, P and Udrea, F and Amaratunga, G and Malhan, RK (2007) High performance cooling system for automotive inverters. In: UNSPECIFIED pp. 2794-2802..

Antoniou, M and Udrea, F and Bauer, F (2007) Optimisation of SuperJunction Bipolar Transistor for ultra-fast switching applications. In: UNSPECIFIED pp. 101-104..

Udrea, F (2007) SOI-based devices and technologies for High Voltage ICs. In: UNSPECIFIED pp. 74-81..

Santra, S and Guha, PK and Haque, MS and Ali, SZ and Udrea, F (2007) Si diode temperature sensor beyond 300 degrees C. In: UNSPECIFIED pp. 415-418..

Iqbal, MM and Udrea, F (2007) Technology-Based Figure of Merit (FOM) for High Voltage LDMOSFETs - Proof of Value of SOI in Power ICs. In: UNSPECIFIED pp. 49-50..

Udrea, F and Maeng, S and Gardner, JW and Park, J and Haque, MS and Ali, SZ and Choi, Y and Guha, PK and Vieira, SMC and Kim, HY and Kim, SH and Kim, KC and Moon, SE and Park, KH and Milne, WI and Oh, SY (2007) Three technologies for a smart miniaturized gas-sensor: SOICMOS, micromachining, and CNTs challenges and performance. In: UNSPECIFIED pp. 831-834..

Mihalia, A and Udrea, F and Rashid, SJ and Amaratunga, GAJ and Kataoka, M and Takeuchi, Y and Malhan, RK (2006) Evaluation of Termination Techniques for 4H-SiC Pin Diodes and Trench JFETs. In: 6th European Conference on Silicon Carbide and Related Materials (ECSCRM'06), 2005-9- to --, Newcastle uon Tyne, UK pp. 925-928..

Mihalia, A and Udrea, F and Rashid, SJ and Godignon, P and Brosselard, P and Tournier, D and Millan, J and Amaratunga, GAJ (2006) Numerical and experimental investigation on bipolar operation of 4H-SIC normally-on vertical JFETs. In: 29th International Semiconductor Conference (CAS 2006), 27-9-2006 to 29-9-2006, Sinaia, Romania pp. 297-300..

Brezeanu, G and Visoreanu, A and Brezeanu, M and Udrea, F and Amaratunga, GAJ and Enache, I and Rusu, I (2006) Off-state performances of ideal Schottky barrier diodes (SBD) on diamond and silicon carbide. In: 29th International Semiconductor Conference (CAS 2006), 27-9-2006 to 29-9-2006, Sinaia, Romania p.319-..

Brezeanu, M and Rashid, SJ and Amaratunga, GAJ and Rupesinghe, NL and Butler, T and Udrea, F and Brezeanu, G (2006) On-state behaviour of diamond M-i-P structures. In: 29th International Semiconductor Conference (CAS 2006), 27-9-2006 to 29-9-2006, Sinaia, Romania p.311-..

Antoniou, M and Udrea, F (2006) Simulated superior performance of the super junction bipolar transistor. In: 29th International Semiconductor Conference (CAS 2006), 27-9-2006 to 29-9-2006, Sinaia, Romania pp. 293-296..

Iqbal, MM and Udrea, F (2006) Technology-based static figure of merit for high voltage ICs. In: 29th International Semiconductor Conference (CAS 2006), 27-9-2006 to 29-9-2006, Sinaia, Romania pp. 417-420..

Guha, PK and Ali, SZ and Udrea, F and Milne, WI and Iwaki, T and Covington, JA and Gardner, JW (2006) Novel design and characterisation of SOI CMOS micro-hotplates for gas sensors. In: 20th Eurosensors Anniversary Conference, 2006-9-17 to 2006-9-20, Goteborg, Sweden pp. 268-269..

Brezeanu, M and Butler, T and Rupesinghe, NL and Rashid, SJ and Avram, M and Amaratunga, GAJ and Udrea, F and Dixon, M and Twitchen, D and Garraway, A and Chamund, D and Taylor, P (2006) Single crystal diamond M-i-P diodes for power electronics. In: The 8th International Seminar on Power Semiconductors (ISPS'06), 2006-8- to -- p.103-..

Udrea, F (2006) State-of-the-art technologies and devices for high voltage ICs. In: The 8th International Seminar on Power Semiconductors (ISPS'06), 2006-8- to -- pp. 37-46..

Mihalia, A and Udrea, F and Rashid, SJ and Godignon, P and Brosselard, P and Tournier, D and Millan, J and Amaratunga, GAJ (2006) High temperature characterization of 4H-SiC normally-on vertical JFETs with buried gate and buried field rings. In: 18th International Symposium on Power Semiconductor Devices and ICs (ISPSD '06), 4-6-2006 to 8-6-2006, Napoli, Italy pp. 161-164..

Napoli, E and Udrea, F (2006) Substrate deep depletion: an innovative design concept to improve the voltage rating of SOI power devices. In: 18th International Symposium on Power Semiconductor Devices and ICs (ISPSD '06), 4-6-2006 to 8-6-2006, Napoli, Italy pp. 57-60..

Brezeanu, M and Avram, M and Rashid, SJ and Amaratunga, GAJ and Butler, T and Rupesinghe, NL and Udrea, F and Tajani, A and Dixon, M and Twitchen, DJ and Garraway, A and Chamund, D and Taylor, P and Brezeanu, G (2006) Termination structures for diamond Schottky barrier diodes. In: 18th International Symposium on Power Semiconductor Devices and ICs (ISPSD '06), 2006-6-4 to 2006-6-8, Napoli, Italy -..

Napoli, E and Udrea, F (2006) Circuital implementation of deep depletion SOI power devices. In: The International Symposium on Power Electronics, Electrical Drives, Automation and Motion, SPEEDAM 2006, 23-5-2006 to 26-5-2006, Taormina (Sicily), Italy pp. 279-283..

Gardner, JW and Beeby, L and Chappell, M and Udrea, F and Yates, J and Dowson, CG (2006) Identification of staphylococcus aureus infections by volatile chemical headspace analysis. In: 24th IASTED International Conference on Biomedical Engineering, 2006-2-15 to 2006-2-17, Innsbruck, Austria pp. 81-86..

Gardner, JW and Beeby, L and Chappell, M and Udrea, F and Yates, J and Dowson, CG (2006) Identification of Staphylococcus aureus infections by volatile chemical headspace analysis. In: The 4th IASTED International Conference on Biomedical Engineering, 2006-2- to --, Innsbruck, Austria pp. 81-86..

Ali, SZ and Guha, PK and Lee, CCC and Udrea, F and Milne, WI and Iwaki, T and Covington, J and Gardner, JW (2006) High temperature SQI CMOS tungsten micro-heaters. In: 5th IEEE Conference on Sensors, 22-10-2006 to 25-10-2006, Daegu, South Korea pp. 847-850..

Iwaki, T and Covington, JA and Gardner, JW and Udrea, F and Blackman, CS (2006) SQI-CMOS based single crystal silicon micro-heaters for gas sensors. In: The 5th IEEE Conference on Sensors, 2006-10-22 to 2006-10-25, Daegu, South Korea pp. 460-463..

Malhan, RK and Takeuchi, Y and Kataoka, M and Mihaila, AP and Rashid, SJ and Udrea, F and Amaratunga, GAJ (2006) Normally-off trench JFET technology in 4H silicon carbide. In: UNSPECIFIED pp. 107-111..

Mihaila, AP and Udrea, F and Rashid, SJ and Takeuchi, Y and Kataoka, M and Malhan, RK (2006) SiC junction-controlled transistors. In: UNSPECIFIED pp. 176-180..

Haque, MS and Marinelli, C and Udrea, F and Milne, WI (2006) Absorption characteristics of single wall carbon nanotubes. In: Technical Proceedings of the 2006 Nsti Nanotechnology Conference and Trade Show, --2006 to --, Boston, MA, USA pp. 134-137..

Gamage, S and Pathirana, V and Udrea, F (2006) Fully coupled dynamic self heating model for power SOI lateral insulated gate bipolar transistors. In: UNSPECIFIED pp. 287-290..

Gamage, S and Pathirana, V and Udrea, F (2006) Fully coupled dynamic self-heating model for power SOI Lateral Insulated Gate Bipolar Transistors. In: The IEEE Meeting on Bipolar/BiCMOS Circuits and Technology Meeting, 2006, 2006-- to -- pp. 1-4..

Iwaki, T and Covington, JA and Gardner, JW and Udrea, F and Blackman, CS and Parkin, IP (2006) SOI-CMOS based single crystal silicon micro-heaters for gas sensors. In: UNSPECIFIED pp. 460-463..

Brezeanu, M and Avram, M and Rashid, SJ and Amaratunga, GAJ and Butler, T and Rupesinghe, NL and Udrea, F and Tajani, A and Dixon, M and Twitchen, DJ and Garraway, A and Chamund, D and Taylor, P and Brezeanu, G (2006) Termination structures for diamond Schottky barrier diodes. In: UNSPECIFIED pp. 73-76..

Gamage, F and Pathirana, V and Udrea, F (2006) A dynamic self heating model for power SOI Lateral Insulated Gate Bipolar Transistors. In: The IEEE International SOI Conference 2006, 2006-- to -- pp. 99-100..

Gamage, S and Pathirana, V and Ali, SZ and Udrea, F (2006) A fully coupled compact self-heating model for a thin SOI LIGBT with packaging. In: The IEEE 1st Electronics Systemintegration Technology Conference, ESTC 2006; Vol. 2, --2006 to --, Dresden, Germany pp. 1096-1102..

Rashid, SJ and Johnson, CM and Udrea, F and Mihalia, A and Amaratunga, GAJ and Malhan, RK (2005) Analysis of novel packaging techniques for high power electronics in SiC. In: 6th European Conference on Silicon Carbide and Related Materials (ECSCRM'06), 2005-9-3 to 2005-9-7, Newcastle uon Tyne, UK pp. 971-974..

Coulbeck, L and Garraway, A and Taylor, P and Rashid, SJ and Brezeanu, M and Butler, T and Rupesinghe, NL and Udrea, F and Amaratunga, GAJ and Tajani, A and Dixon, M and Twitchen, D (2005) Diamond for high voltage high power electronics, a comparison to other semiconductors. In: 16th European Conference on Diamond, Diamond-like Materials, Carbon Nanotubes, and Nitrides (Diamond 2005), 2005-9-11 to 2005-9-16, Toulouse, France pp. 268-269..

Amaratunga, GAJ and Butler, T and Rupesinghe, NL and Rashid, SJ and Brezeanu, M and Udrea, F and Tajani, A and Twitchen, DJ and Wort, C and Coulbeck, L and Taylor, P and Isberg, J (2005) High voltage synthetic single crystal diamond metal-intrinsic-p+ (MIP) diodes. In: 16th European Conference on Diamond, Diamond-Like Materials, Carbon Nanotubes, Nitrides and Silicon Carbide, 2005-9-11 to 2005-9-16, Grenoble, France.

Rashid, SJ and Tajani, A and Coulbeck, L and Brezeanu, M and Garraway, A and Butler, T and Rupesinghe, NL and Twitchen, DJ and Udrea, F and Taylor, P and Isberg, J and Amaratunga, GAJ (2005) Analysis of carrier transport in synthetic single crystal diamond Schottky diodes. In: 3rd International Conference on Materials for Advanced Technologies, ICMAT' 05, 2005-7-3 to 2005-7-8, Singapore.

Napoli, E and Pathirana, V and Udrea, F (2005) Accurate physical model for the lateral IGBT in silicon on insulator technology. In: The International Symposium on Industrial Electronics, ISIE 2005, -6-2005 to --, Dubrovnik, Croatia pp. 457-462..

Rashid, SJ and Brezeanu, M and Butler, T and Rupesinghe, NL and Udrea, F and Amaratunga, GAJ and Coulbeck, L and Garraway, A and Taylor, P and Twitchen, DJ (2005) Numerical and experimental analysis of single crystal diamond Schottky barrier diodes. In: The 17th International Symposium on Power Semiconductor Devices and ICs, -5-2005 to --, Santa Barbara, CA, USA pp. 315-318..

Udrea, F and Trajkovic, T and Lee, C and Garner, D and Yuan, X and Joyce, J and Udugampola, N and Bonnet, G and Coulson, D and Jacques, R (2005) Ultra-fast LIGBTs and superjunction devices in membrane technology. In: The 17th International Symposium on Power Semiconductor Devices and ICs, -5-2005 to --, Santa Barbara, CA, USA pp. 267-270..

Napoli, E and Pathirana, V and Udrea, F and Bonnet, G and Trajkovic, T and Amaratunga, GAJ (2005) A compact model for thin SOI LIGBTs: description, experimental verification and system application. In: The 17th International Symposium on Power Semiconductor Devices and ICs, -5-2005 to --, Santa Barbara, CA, USA pp. 95-98..

Pathirana, V and Napoli, E and Gamage, S and Udrea, F (2005) A complete isothermal model for the lateral insulated gate bipolar transistor on SOI technology. In: TENCON 2005, the IEEE Region 10 Conference, -11-2005 to -- pp. 179-184..

Mihaila, A and Udrea, F and Rashid, SJ and Godignon, P and Millan, J (2005) SiC junction FETs - a state of the art review. In: The 28th International Semiconductor Conference, CAS'05, 5-10-2005 to --, Sinaia, Romania pp. 349-352..

Brezeanu, G and Badila, M and Brezeanu, M and Udrea, F and Boianceanu, C and Enache, I and Draghici, F and Visioreanu, A (2005) Breakdown performance improvements of SiC diodes using high-k dielectrics. In: The 28th International Semiconductor Conference (CAS'05), -10-2005 to -- pp. 357-360..

Brezeanu, M and Rashid, SJ and Butler, T and Rupesinghe, NL and Udrea, F and Garraway, A and Coubeck, L and Taylor, P and Amaratunga, GAJ and Twitchen, DJ (2005) Highly efficient edge terminations for diamond Schottky diodes. In: The 28th International Semiconductor Conference, CAS'05, -10-2005 to --, Sinaia, Romania pp. 319-322..

Bertrand, I and Pathirana, V and Imbernon, E and Udrea, F and Bafleur, M and Ng, R and Granier, H and Rousset, B and Dilhac, JM (2005) New lateral DMOS and IGBT structures realized on a partial SOI substrate based on LEGO process. In: The Bipolar BiCMOS Circuits and Technology Meeting, -10-2005 to --, Santa Barbara, CA, USA pp. 74-77..

Gamage, S and Pathirana, V and Udrea, F (2005) A compact steady-state self-heating model for a thin SOI LIGBT. In: The 28th International Semiconductor Conference (CAS'05), -10-2005 to -- pp. 311-314..

Ravariu, C and Rusu, A and Udrea, F and Ravariu, F (2005) Quantum effects in miniaturized diamond on Sapphire field effect transistors. In: European Conference on Diamond, Diamond-Like Materials, Carbon Nanotubes and Nitrides, 2005-- to --, Toulouse, France.

Ayoz, S and Tuncer, HM and Udrea, F and Ionescu, A and Fritschi, R (2005) A current density distribution approach to the optimisation of RF-MEMS variable capacitors. In: UNSPECIFIED pp. 527-534..

de Silva, DIM and Shrestha, NK and Palmer, PR and Udrea, F and Amaratunga, GAJ and Chamund, D and Coulbeck, L and Waind, P (2004) Accurate conduction and switching loss models of IGBTs for resonant converter design. In: 2004 IEEE 35th Annual Power Electronics Specialists Conference (PESC 04), 20-6-2004 to 25-6-2004, Aachen, Germany pp. 2950-2955..

Azar, R and Udrea, F and De Silva, M and Amaratunga, G and Ng, WT and Dawson, F and Findlay, W and Waind, P (2004) Advanced SPICE modeling of large power IGBT modules. In: UNSPECIFIED pp. 710-716..

Udrea, F and Mihalia, A and Rashid, SJ and Amaratunga, GAJ and Takeuchi, Y and Kataoka, M and Malhan, RK (2004) A double channel normally-off SiC JFET device with ultra-low on-state resistance. In: The 6th International Symposium on Power Semiconductor Devices and ICs; ISPSD'04, -5-2004 to --, Kitakyushu, Japan pp. 309-312..

Udrea, F and Trajkovic, T and Amaratunga, GAJ (2004) High voltage devices - a milestone concept in power ICs. In: IEEE International Electron Devices Meeting, 2004-12-13 to 2004-12-15, San Francisco, CA, USA pp. 451-454..

Ali, SZ and Gonzalez, W and Gardner, JW and Udrea, F (2004) Analysis of high temperature SOI microhotplates. In: The 27th International Semiconductor Conference (CAS'04), 4-10-2004 to 6-10-2004, Sinaia, Romania pp. 351-354..

Tuncer, HM and Udrea, F and Amaratunga, GAJ (2004) A 5 GHz low power 0.18 mum CMOS gilbert cell mixer. In: The 27th International Semiconductor Conference (CAS'04), 2004-10- to --, Sinaia, Romania pp. 161-164..

Baditoiu, C and Ravariu, C and Rusu, A and Udrea, F (2004) Dynamic behavior optimization of the junctions with SIPOS layer termination. In: The 27th International Semiconductor Conference (CAS'04), -10-2004 to --, Sinaia, Romania pp. 367-370..

Brezeanu, M and Rashid, SJ and Butler, T and Rupesinghe, NL and Udrea, F and Okano, K and Amaratunga, GAJ and Twitchen, DJ and Tajani, A and Wort, C (2004) High voltage Schottky barrier diodes in synthetic single crystal diamond. In: The 27th International Semiconductor Conference (CAS'04), -10-2004 to --, Sinaia, Romania pp. 385-388..

Udrea, F and Amaratunga, GAJ and Udugampola, N (2004) Inversion layer injection devices from concept to applications in HVICs. In: The 27th International Semiconductor Conference (CAS'04), -10-2004 to --, Sinaia, Romania pp. 9-18..

Boianceanu, C and Brezeanu, G and Udrea, F and Amaratunga, GAJ and Brezeanu, M and Mihalia, A and Draghici, F and Enache, I and Visoreanu, A (2004) SiC device parameters effects on the electrical behaviour of MCascode switch. In: The 27th International Semiconductor Conference (CAS'04), -10-2004 to --, Sinaia, Romania pp. 389-392..

Ayoz, S and Wassell, IJ and Udrea, F (2004) A simulation study for very low power 5 GHz CMOS voltage-controlled oscillators and frequency dividers. In: The 27th International Semiconductor Conference (CAS'04), 2004-10- to --, Sinaia, Romania pp. 141-146..

Tuncer, HM and Udrea, F and Amaratunga, GAJ (2004) A 5 GHz low power 0.18 mum CMOS gilbert cell mixer. In: The 27th International Semiconductor Conference (CAS'04), -- to --.

Udrea, F and Trajkovic, T and Amaratunga, GAJ (2004) Membrane high voltage devices - A milestone concept in power ICs. In: UNSPECIFIED pp. 451-454..

Ayoz, S and Wassell, IJ and Udrea, F (2004) A simulation study for very low power 5 GHz CMOS voltage-controlled oscillators and frequency dividers. In: The 27th International Semiconductor Conference (CAS'04), -- to --.

Mihalia, A and Udrea, F and Godignon, P and Brezeanu, G and Malhan, RK and Rusu, A and Millan, J and Amaratunga, GAJ (2003) Hybrid Si/SiC and fully integrated all SiC cascode configured power switches for high voltage applications. In: 10th European Conference on Power Electronics and Applications, EPE' 03, 2003-9-2 to 2003-9-4, Toulouse, France.

Shrestha, NK and De Silva, DIM and Amaratunga, GAJ and Udrea, F and Palmer, PR and Chamund, D and Coulbeck, L and Waind, P (2003) Switching internal dynamics of trench IGBT in ZCS single ended resonant converters. In: 10th European Conference on Power Electronics and Applications, EPE' 03, 2003-9-2 to 2003-9-4, Toulouse, France.

Gardner, JW and Covington, JA and Shaw, JA and Parkin, I and Udrea, F (2003) SOI gas sensors with low temperature CVD films. In: 17th European Conference on Solid-State Tranducers, Eurosensors, 2003-9-21 to 2003-9-24, Guimarães, Portugal.

Brezeanu, G and Godignon, P and Millan, J and Udrea, F and Amaratunga, GAJ and Badila, M and Mihalia, A and Braghici, F (2003) Comparison of Schottky and pn 6H-SiC photo-detectors with excellent UV sensitivity and selectivity. In: 13th European Conference on Diamond, Diamond-Like Materials, Carbon Nanotubes, Nitrides and Silicon Carbide, 2002-9- to --, Granada, Spain 8-..

Brezeanu, G and Badila, M and Millan, J and Udrea, F and Godignon, P and Mihaila, A and Amaratunga, GAJ and Brezeanu, M and Boianceanu, C (2003) High performance SiC diodes based on an efficient planar termination. In: The 26th International Semiconductor Conference; CAS 2003, -9-2003 to --, Sinaia, Romania pp. 27-38..

Brezeanu, G and Udrea, F and Amaratunga, GAJ and Mihaila, A and Godignon, P and Millan, J and Badila, M (2003) Improved understanding and optimization of SiC nearly solar blind UV photodiodes. In: The 4th European Conference on European Conference on Silicon Carbide and Related Materials, -9-2002 to --, Linkoping, Sweden pp. 965-968..

Mihalia, A and Udrea, F and Godignon, P and Trajkovic, T and Brezeanu, G and Rebollo, J and Millan, J (2003) Novel buried field rings edge termination for 4H-SiC high-voltage devices. In: The 4th European Conference on European Conference on Silicon Carbide and Related Materials, -9-2002 to --, Linkoping, Sweden pp. 891-894..

Boianceanu, C and Brezeanu, M and Palfi, A and Mihaila, A and Brezeanu, G and Udrea, F and Amaratunga, GAJ and Enache, I (2003) Transient analysis of Si-MOS and SiC-JFET cascode power switches. In: The 26th International Semiconductor Conference; CAS 2003, -9-2003 to --, Sinaia, Romania pp. 227-230..

Pathirana, GPV and Udrea, F and Ng, R and Garner, DM and Amaratunga, GAJ (2003) 3D-RESURF SOI LDMOSFET for RF power amplifiers. In: The 15th International Symposium on Power Semiconductor Devices and ICs; ISPSD '03, -4-2003 to --, Cambridge, UK pp. 278-282..

Azar, R and Udrea, F and Ng, WT and Dawson, F and Finlay, W and Waind, P and Amaratunga, GAJ (2003) Advanced electro-thermal SPICE modelling of large power IGBTS. In: The 15th International Symposium on Power Semiconductor Devices and ICs; ISPSD '03, -4-2003 to --, Cambridge, UK pp. 291-294..

Udugampola, UNK and McMahon, RA and Udrea, F and Sheng, K and Amaratunga, GAJ and Narayanan, EMS and Hardikar, S and De Souza, MM (2003) Dual gate inversion layer emitter transistor for power and high voltage integrated circuits. In: The 15th International Symposium on Power Semiconductor Devices and ICs; ISPSD '03, -4-2003 to --, Cambridge, UK pp. 216-219..

Mihalia, A and Udrea, F and Godignon, P and Brezeanu, G and Malhan, RK and Rusu, A and Millan, J and Amaratunga, GAJ (2003) Towards fully integrated SiC cascode power switches for high voltage applications. In: The 15th International Symposium on Power Semiconductor Devices and ICs; ISPSD '03, -4-2003 to --, Cambridge, UK pp. 379-382..

De Silva, DIM and Shrestha, NK and Azar, R and Amaratunga, GAJ and Udrea, F and Palmer, PR and Chamund, D and Coulbeck, L and Waind, P (2003) Trench gate IGBTs for zero current switching applications. In: The 18th Annual Applied Power Electronics Conference; APEC 2003, -2-2003 to --, Miami Beach, FL, USA pp. 933-937..

De Silva, DIM and Shrestha, NK and Palmer, PR and Udrea, F and Amaratunga, GAJ and Chamund, D and Coulbeck, L and Waind, P (2003) Characterising trench IGBTS for resonant switching conditions using single ended and half-bridge application circuits. In: The 5th International Conference on Power Electronics and Drive Systems; PEDS 2003, -11-2003 to --, Singapore pp. 60-65..

Rashid, SJ and Mihaila, A and Udrea, F and Amaratunga, GAJ (2003) Trench oxide protection for 10 KV 4H-SIC trench MOSFETs. In: The 5th International Conference on Power Electronics and Drive Systems; PEDS 2003, -11-2003 to --, Singapore pp. 1354-1358..

Rashid, SJ and Mihaila, A and Udrea, F and Malhan, RK and Amaratunga, GAJ (2003) Evaluation of trench oxide protection techniques on ultra high voltage (10 kV) 4H-SiC UMOSFETs. In: The 10th International Conference on Silicon Carbide and Related Materials; ICSCRM2003, -10-2003 to --, Lyon, France pp. 1441-1444..

Brezeanu, G and Godignon, P and Dimitrova, E and Raynaud, C and Planson, D and Mihaila, A and Udrea, F and Millan, J and Amaratunga, GAJ and Boianceanu, C (2003) Towards the fabrication and measurement of high sensitivity SiC-UV detectors with oxide ramp termination. In: The 10th International Conference on Silicon Carbide and Related Materials; ICSCRM2003, -10-2003 to --, Lyon, France pp. 1495-1498..

Lu, CC and Udrea, F and Covington, JA and Gardner, JW (2002) Electro-thermal characterisation of high-temperature smart gas sensors in SOI CMOS technology. In: The 17th European Conference on Solid-State Transducers; Eurosensors XVI, 2002-9- to --, Prague, Czech Republic pp. 671-672..

Sheng, K and Udugampola, UNK and Khoo, GFW and Udrea, F and Amaratunga, GAJ and McMahon, RA and Narayanan, EMS and De Souza, MM and Hardikar, S (2002) Dual gate lateral inversion layer emitter transistor. In: 14th International Symposium on Power Semiconductor Devices and ICs, 4-6-2002 to 7-6-2002, Santa Fe, NM, USA pp. 37-40..

Gardner, JW and Cole, M and Udrea, F (2002) CMOS gas sensors and smart devices. In: The IEEE Sensors 2002, 2002-6-12 to 2002-6-24, Orlando, Florida pp. 721-726..

Covington, JA and Udrea, F and Gardner, JW (2002) Resistive gas sensor with integrated MOSFET micro hot-plate based on an analogue SOI CMOS process. In: The IEEE Sensors 2002, 2002-6-12 to 2002-6-24, Orlando, Florida pp. 1389-1394..

Udrea, F and Gardner, JW (2002) SOI CMOS gas sensors. In: The IEEE Sensors 2002, 12-6-2002 to 14-6-2002, Orlando, Florida pp. 1379-1384..

Udugampola, UNK and Khoo, GFW and Sheng, K and McMahon, RA and Udrea, F and Amaratunga, GAJ and Narayanan, EMS and Hardikar, S and De Souza, MM (2002) Characterisation of dual gate lateral inversion layer emitter transistor. In: The International Conference on Power Electronics Machines and Drives, -4-2002 to --, Bath, UK pp. 557-561..

Yuan, X and Udrea, F and Coulbeck, L and Waind, P and Amaratunga, GAJ (2002) Optimisation of local lifetime control in high power diode. In: The International Conference on Power Conversion, -4-2002 to --, Osaka, Japan pp. 226-231..

de Silva, DIM and Shrestha, NK and Palmer, PR and Udrea, F and Amaratunga, GAJ and Chamund, D and Coulbeck, L and Waind, P (2002) Characteristics of trench gate and DMOS IGBTs in a ZCS single-ended resonant inverter. In: IEEE International Conference on Semiconductor Electronics 2002 (ICSE 2002), 19-12-2002 to 21-12-2002, Penang, Malaysia pp. 87-91..

Mihalia, A and Udrea, F and Azar, R and Brezeanu, G and Amaratunga, GAJ (2002) Static and dynamic behaviour of SiC JFET/Si MOSFET cascode configuration for high performance power switches. In: The 9th International Conference on Silicon Carbide and Related Materials ( ICSCRM2001), 28-10-2002 to 1-11-2002, Tsukuba, Japan pp. 1239-1242..

Azar, R and Udrea, F and De Silva, M and Amaratunga, GAJ and Ng, WT and Dawson, F and Findlay, W and Waind, P (2002) Advanced SPICE modeling of large power IGBT modules. In: 2002 Industry Applications Conference. 37th IAS General Meeting, 13-10-2002 to 18-10-2002, Pittsburgh, PA, USA pp. 2433-2436..

Udrea, F (2002) Advanced 3D resurf devices for power integrated circuits. In: The 25th IEEE International Semiconductor Conference, -10-2002 to --, Sinaia, Romania pp. 229-240..

Mihalia, A and Udrea, F and Godignon, P and Trajkovic, T and Brezeanu, G and Rusu, A and Rebello, J and Millan, J (2002) Buried field rings - a novel edge termination method for 4H-SiC high voltage devices. In: The 25th IEEE International Semiconductor Conference, -10-2002 to --, Sinaia, Romania pp. 245-248..

Brezeanu, G and Udrea, F and Mihaila, A and Amaratunga, GAJ and Millan, J and Godignon, P and Badila, M and Draghici, F and Boianceanu, C and Brezeanu, M (2002) Numerical and analytical study of 6H-SiC detectors with high UV performance. In: The 25th IEEE International Semiconductor Conference, -10-2002 to --, Sinaia, Romania pp. 185-188..

Manook, R and Udrea, F (2002) Numerical study of smart pressure sensors: the Piezomos effect. In: The 25th IEEE International Semiconductor Conference, -10-2002 to --, Sinaia, Romania pp. 321-324..

Pathirana, V and Udrea, F and Rusu, A (2002) P1 novel 3D SOI RF power MOSFET. In: The 25th IEEE International Semiconductor Conference, 2002-10- to --, Sinaia, Romania pp. 241-244..

Sheng, K and Udrea, F and Amaratunga, GAJ and Palmer, PR (2001) Behaviour of the CoolMOS device and its body diode. In: The 31st European Solid-State Device Research Conference (ESSDERC'01), 2001-9-11 to 2001-9-13, Nuremburg, Germany pp. 251-254..

Sheng, K and Udrea, F and Amaratunga, GAJ (2001) Double gate 3D AC switch - a new power semiconductor device. In: The 31st European Solid-State Device Research Conference (ESSDERC'01), 2001-9-11 to 2001-9-13, Nuremburg, Germany pp. 407-410..

Trajkovic, T and Udrea, F and Amaratunga, GAJ (2001) Single to double gate TIGBTs - possible road-map to ultra-high voltage bipolar-MOS devices. In: The Bipolar/BiCMOS Circuits and Technology Meeting, -9-2001 to --, Minneapolis, MN, USA pp. 184-187..

Gardner, DM and Udrea, F and Ensell, G and Sheng, K and Popescu, AE and Amaratunga, GAJ and Milne, WI (2001) Failure mechanisms of SOI high-voltage LIGBTs and LDMOSes under unclamped inductive switching. In: The 13th IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD), -6-2001 to --, Osaka, Japan pp. 335-338..

Ng, R and Udrea, F and Sheng, K and Ueno, K and Amaratunga, GAJ and Nishiura, M (2001) Lateral unbalanced super junction (USJ)/3D-RESURF for high breakdown voltage on SOI. In: The 11th IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD), -6-2001 to --, Osaka, Japan pp. 395-398..

Gardner, J and Covington, J and Udrea, F and Dogaru, T and Lu, C and Milne, WI (2001) SOI-based micro-hotplate microcalorimeter gas sensor with integrated BiCMOS transducer. In: The 15th European Conference on Solid-State Transducers; Transducers '01, -6-2001 to --, Munich, Germany pp. 1688-1691..

Udrea, F and Trajkovic, T and Thomson, J and Coulbeck, L and Waind, PR and Amaratunga, GAJ and Taylor, P (2001) Ultra-high voltage device termination using the 3D RESURF (super-junction) concept - experimental demonstration at 6.5 kV. In: The 11th IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD), -6-2001 to --, Osaka, Japan pp. 129-132..

Yuan, X and Udrea, F and Coulbeck, L and Waind, PR and Amaratunga, GAJ (2001) Modelling of IGBTs with local lifetime control. In: The 1st International Semiconductor Technology Conference, 2001-5- to --, Shanghai, China pp. 422-431..

Lu, C-C and Udrea, F and Gardner, JW and Setiadi, D and Dogaru, T and Tsai, TH and Covington, JA (2001) Design and coupled-effect simulations of CMOS micro gas sensors built on SOI thin membranes. In: The SPIE International Symposium on the Design, Test, Integration, and Packaging of MEMS/MOEMS, 2001-4- to --, Cannes, France pp. 86-95..

Popescu, A and Udrea, F and Sheng, K and Garner, D and Lim, HT and Ng, R and Khoo, G and Milne, WI (2001) Advanced RESURF concepts in SOI devices - optimisation and fabrication. In: 10th International Symposium on Silicon-on-Insulator Technology and Devices, 2001-3- to --, Washington, DC, USA pp. 325-330..

Mihalia, A and Udrea, F and Sheng, K and Azar, R (2001) Mixed-mode investigation of hybrid SiC/Si cascode configurations. In: The International Semiconductor Device Research Symposium, -12-2001 to --, Washington, USA pp. 575-578..

Yuan, X and Udrea, F and Trajkovic, T and Thomson, J and Waind, P and Taylor, P and Amaratunga, GAJ (2001) Enhanced on-state performance trench IGBT with a self-aligned p base. In: 2001 IEEE Industry Applications Conference (36th IAS Annual Meeting), 30-9-2001 to 4-10-2001, Chicago, IL, USA pp. 1033-1037..

Mihaila, A and Udrea, F and Azar, R and Brezeanu, G (2001) Analysis of static and dynamic behaviour of SiC and Si devices connected in cascode configuration. In: The 24th International Semiconductor Conference; CAS 2001, -10-2001 to --, Sinaia, Romania pp. 333-336..

Dobrescu, D and Rusu, A and Udrea, F and Dobrescu, L (2001) Image force effect on forward characteristic of a rectifier metal-semiconductor contact. In: The 24th International Semiconductor Conference; CAS 2001, -10-2001 to --, Sinaia, Romania pp. 429-432..

Amaratunga, GAJ and Udrea, F (2001) Power devices for high voltage integrated circuits: new device and technology concepts. In: The 24th International Semiconductor Conference; CAS 2001, -10-2001 to --, Sinaia, Romania pp. 441-448..

Udrea, F and Mihalia, A and Azar, R (2001) Silicon/oxide/silicon carbide (SiOSiC)- a new approach for high voltage, high frequencies integrated circuits. In: The 9th International Conference on Silicon Carbide and Related Materials ( ICSCRM2001), -10-2001 to --, Tsukuba, Japan pp. 1255-1258..

Brezeanu, G and Badila, M and Godignon, P and Millan, J and Udrea, F and Mihaila, A and Amaratunga, GAJ (2001) UV detection properties of epitaxial 6H-SiC diodes with oxide ramp termination. In: The 24th International Semiconductor Conference, CAS 2001, -10-2001 to --, Sinaia, Romania pp. 345-348..

Brezeanu, G and Badila, M and Godignon, P and Millan, J and Udrea, F and Mihaila, A and Amaratunga, GAJ (2001) An effective high-voltage termination for SiC planar pn junctions for use in high-voltage devices and UV detectors. In: The 9th International Conference on Silicon Carbide and Related Materials ( ICSCRM2001), -10-2001 to --, Tsukuba, Japan pp. 1301-1304..

Huang, S and Amaratunga, GAJ and Udrea, F and Waind, P and Coulbeck, L and Taylor, P (2001) A new single gate MOS controlled thyristor with current saturation and large SOA. In: The 6th IEEE International Conference on Solid-State and Integrated Circuit Technology, -10-2001 to --, Shanghai, China pp. 162-165..

Ng, R and Udrea, F and Sheng, K and Amaratunga, GAJ (2001) A study of the CoolMOS integral diode: analysis and optimisation. In: The 24th International Semiconductor Conference; CAS 2001, -10-2001 to --, Sinaia, Romania pp. 461-464..

Pathirana, GPV and Udrea, F and Rusu, A (2001) Novel 3D SOI RF power MOSFET. In: UNSPECIFIED pp. 241-244..

Sheng, K and Udrea, F and Amaratunga, GAJ (2000) Optimum carrier distribution of the IGBT. In: The 9th International Conference on Power Electronics and Motion Control (EPE-PEMC), 5-9-2000 to 7-9-2000, Košice, Slovak Republic pp. 1573-1583..

Sheng, K and Udrea, F and Trajkovic, T and Huang, SM and Amaratunga, GAJ and Waind, P (2000) PT and NPT IGBTs up to 1.2kV - which is optimum? In: The 9th International Conference on Power Electronics and Motion Control (EPE-PEMC), 2000-9-5 to 2000-9-7, Košice, Slovak Republic pp. 204-208..

Ng, R and Udrea, F (2000) Reverse doped structure for high breakdown voltages and low on-resistance in SOI power devices. In: The 5th International Symposium on Power Semiconductors, ISPS' 00, 2000-9- to --, Prague, Czech Republic pp. 157-161..

Mihaila, A and Udrea, F and Brezeanu, G and Azar, R and Amaratunga, GAJ (2000) SiC junction control, an alternative to MOS control high voltage switching devices. In: The 3rd European Conference on Silicon Carbide and Related Materials, -9-2000 to --, Kloster Banz, Germany pp. 723-726..

Sheng, K and Huang, SM and Udrea, F and Amaratunga, GAJ (2000) Quasi-punch-through structure for power semiconductor devices. In: The 3rd International Power Electronics and Motion Control Conference; IPEMC 2000; Vol. 3, -8-2000 to --, Beijing, China pp. 224-228..

Huang, S and Sheng, K and Amaratunga, GAJ and Udrea, F and Waind, P (2000) An experimental and numerical investigation of IGBT blocking characteristics. In: The 3rd International Power Electronics and Motion Control Conference; IPEMC 2000, -8-2000 to --, Beijing, China pp. 407-411..

Udrea, F and etiadi, D and Gardner, JW and Covington, JA and Lu, CC (2000) A novel class of smart gas sensors using CMOS micro-heaters embedded in an SOI membrane. In: The 14th European Conference on Solid-State Transducers; Eurosensors XIV, 2000-8- to --, Copenhagen, Denmark pp. 391-392..

Chamund, D and Waind, P and Udrea, F and Yuan, X (2000) A robust 1200V trench insulated gate bipolar transistor. In: The 41st International Power Conversion Conference; PCIM 2000, 2000-6- to --, Nurnberg, Germany pp. 581-585..

Udrea, F and Popescu, A and Ng, R and Amaratunga, GAJ (2000) Minority carrier injection across the 3D RESURF junction. In: The 12th International Symposium on Power Semiconductor Devices and ICs; ISPSD 2000, 2000-5- to --, Toulouse, France pp. 321-327..

Trajkovic, T and Udrea, F and Waind, PR and Amaratunga, GAJ (2000) The effect of static and dynamic parasitic charge in the termination area of high voltage devices and possible solutions. In: The 12th International Symposium on Power Semiconductor Devices and ICs; ISPSD 2000, -5-2000 to --, Toulouse, France pp. 263-266..

Lu, CC and Setiadi, D and Udrea, F and Milne, WI and Covington, JA and Gardner, JW (2000) 3D thermo-electro-mechanical simulations of gas sensors based on SOI membranes. In: The 3rd International Conference on the Modeling and Simulation of Microsystems (MSM 2000), 2000-3- to --, San Diego, CA, USA pp. 297-300..

Brezeanu, G and Badila, M and Tudor, B and Millan, J and Godignon, P and Locatelli, ML and Chante, JP and Amaratunga, GAJ and Udrea, F and Mihaila, A (2000) Accurate modelling of Ni/6H-SiC Schottky barrier diodes (SBD) forward characteristics at high current densities. In: The 23rd International Semiconductor Conference; CAS 2000, -10-2000 to --, Sinaia, Romania pp. 193-196..

Ionicioiu, R and Amaratunga, GAJ and Popescu, A and Udrea, F (2000) Quantum computation with ballistic qubits. In: The 23rd International Semiconductor Conference; CAS 2000, -10-2000 to --, Sinaia, Romania pp. 97-100..

Mihaila, A and Udrea, F and Amaratunga, GAJ and Brezeanu, G (2000) A comprehensive analysis of breakdown mechanisms in 4H-SiC MOSFET and JFET. In: The 23rd International Semiconductor Conference; CAS 2000, -10-2000 to --, Sinaia, Romania pp. 185-188..

Udrea, F and Popescu, A and Ng, R and Amaratunga, GAJ (2000) Minority carrier injection across the 3D RESURF junction. In: UNSPECIFIED pp. 201-204..

Lu, CC and Setiadi, D and Udrea, F and Milne, WI and Covington, JA and Gardner, JW (2000) Thermo-electro-mechanical simulations of gas sensors based on SOI membranes. In: UNSPECIFIED pp. 297-300..

Amaratunga, GAJ and Udrea, F and McMahon, RA (1999) Power integrated circuits: devices and applications. In: The Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 26-9-1999 to 28-9-1999, Minneapolis, MN, USA pp. 75-79..

Garner, DM and Ensell, G and Bonar, J and Blackburn, A and Udrea, F and Lim, HT and Popescu, A and Hemment, PLF and Milne, WI (1999) The fabrication of a partial SOI substrate. In: The 9th International Symposium on Silicon-on-Insulator Technology and Devices, 1999-5- to -- Chapter 54-..

Gardner, JW and Udrea, F and Milne, WI (1999) Numerical simulation of a new generation of high-temperature micropower gas and odor sensors based on SOI technology. In: Smart Structures and Materials 1999: Smart Electronics and MEMS, 1-3-1999 to 3-3-1999, Newport Beach, CA, US pp. 104-112..

Setiadi, D and Udrea, F and Milne, WI and Covington, JA and Gardner, JW (1999) 3D numerical simulation of novel SOI MOSFET based gas sensors. In: The 4th International Symposium on Chemical Sensors, -3-2000 to --, San Diego, CA, USA pp. 416-419..

Lim, H-T and Udrea, F and Garner, DM and Sheng, K and Milne, WI (1999) Partial SOI LDMOSFETs for high-side switching. In: International Conference on Semiconductor, CAS' 99, 1999-10-5 to 1999-10-9, Sinaia, Romania pp. 149-152..

Garner, DM and Ensell, G and Bonar, J and Blackburn, A and Udrea, F and Lim, HT and Popescu, A and Hemment, PLF and Milne, WI (1999) The fabrication of a partial SOI substrate. In: UNSPECIFIED pp. 73-78..

Udrea, F and Lim, HT and Garner, DM and Milne, WI and Hemment, PLF (1998) Thin partial SOI power devices for high voltage integrated circuits. In: The NATO Advanced Research Workshop on Perspectives, Science and Technologies for Novel Silicon on Insulator Devices, -10-1998 to --, Kyiv, Ukraine pp. 321-327..

Udrea, F and Popescu, A and Milne, W (1998) The 3D RESURF junction. In: UNSPECIFIED pp. 141-144..

Udrea, F and Popescu, A and Milne, WI (1998) A new class of lateral power devices for HVIC's based on the 3D RESURF concept. In: UNSPECIFIED pp. 187-190..

Udrea, F and Milne, WI and Hemment, P (1997) New high voltage device structures in SOI based technology. In: 8th International Symposium on Silicon-on-Insulator Technology and Devices VIII, -8-1997 to --, Paris, France pp. 401-406..

Popescu, A and Udrea, F and Milne, WI (1997) A numerical study of the resurf effect in bulk and SOI power devices. In: 20th International Semiconductor Conference; Vol. 1, 7-10-1997 to 11-10-1997, Sinaia; Romania pp. 127-130..

Udrea, F and Amaratunga, GAJ (1997) Inversion layer emitter devices for HV ICs. In: UNSPECIFIED pp. 305-308..

Udrea, F and Popescu, A and Milne, W (1996) Breakdown analysis in JI, SOI and partial SOI power structures. In: UNSPECIFIED pp. 102-103..

Udrea, F and Amaratunga, GAJ (1996) The Trench Inversion Layer Emitter Thyristor (ILET). In: UNSPECIFIED pp. 523-526..

Udrea, F and Amaratunga, GAJ (1996) The double gate lateral inversion layer emitter transistor - A novel power device concept with a dynamic emitter. In: UNSPECIFIED pp. 73-76..

Amaratunga, GAJ and Udrea, F (1996) The new generation of power semiconductor devices. In: UNSPECIFIED pp. 469-478..

UDREA, F and AMARATUNGA, GAJ (1995) A unified analytical model for the carrier dynamics in Trench Insulated Gate Bipolar Transistors (TIGBT). In: UNSPECIFIED pp. 190-195..

UDREA, F and AMARATUNGA, GAJ (1994) THE INVERSION LAYER EMITTER THYRISTOR - A NOVEL POWER DEVICE CONCEPT. In: UNSPECIFIED pp. 309-314..

SILARD, AP and DUTA, MJ and CERCELARU, S and UDREA, F (1992) A NOVEL POWER GTO THYRISTOR. In: UNSPECIFIED pp. 1141-1143..

Patent

UNSPECIFIED Bi-directional semiconductor switch. doi:.

UNSPECIFIED Dissipating heat from semiconductor devices. doi:.

UNSPECIFIED Gas-sensing semiconductor device. doi:.

UNSPECIFIED Gas-sensing semiconductor devices. doi:.

UNSPECIFIED High voltage semiconductor device. doi:.

UNSPECIFIED Improvement of semiconductor device. doi:.

UNSPECIFIED Insulated gate bipolar transistor. doi:.

UNSPECIFIED Insulated gate field-effect transistors. doi:.

UNSPECIFIED Lateral semiconductor device. doi:.

UNSPECIFIED Lateral semiconductor device. doi:.

UNSPECIFIED Lateral semiconductor device. doi:.

UNSPECIFIED Lateral semiconductor device. doi:.

UNSPECIFIED Lateral semiconductor-on-insulator structure and corresponding manufacturing methods. doi:.

UNSPECIFIED Lateral soi semiconductor device. doi:.

UNSPECIFIED SOI power device. doi:.

UNSPECIFIED Semiconductor device. doi:.

UNSPECIFIED Semiconductor device and method of forming a semiconductor device. doi:.

UNSPECIFIED Semiconductor device and method of forming a semiconductor device. doi:.

UNSPECIFIED Semiconductor device and method of forming a semiconductor device. doi:.

UNSPECIFIED Semiconductor device and method of forming a semiconductor device. doi:.

UNSPECIFIED Semiconductor device and method of forming a semiconductor device. doi:.

UNSPECIFIED Semiconductor device and method of forming a semiconductor device. doi:.

UNSPECIFIED Semiconductor device and method of forming a semiconductor device. doi:.

UNSPECIFIED Semiconductor device and method of forming a semiconductor device. doi:.

UNSPECIFIED Semiconductor device and method of forming a semiconductor device. doi:.

UNSPECIFIED Semiconductor device having an insulated gate field effect transistor and exhibiting thyristor action. doi:.

UNSPECIFIED Semiconductor device provided by silicon carbide substrate and method for manufacturing the same. doi:.

UNSPECIFIED Semiconductor device with 3-D resurf junctions. doi:.

UNSPECIFIED Semiconductor devices. doi:.

UNSPECIFIED Silicon carbide semiconductor device. doi:.

UNSPECIFIED Silicon carbide semiconductor device having junction field effect transistor and method for manufacturing the same. doi:.

UNSPECIFIED Silicon carbide semiconductor device with junction type field effect transistor and its producing method. doi:.

UNSPECIFIED Switching device. doi:.

UNSPECIFIED Switching device. doi:.

UNSPECIFIED Trench thyristor with improved breakdown voltage characteristics. doi:.

Thesis

Udrea, F (1995) Novel MOS-gated bipolar device concepts towards a new generation of power semiconductor devices. PhD thesis, UNSPECIFIED.