Publications by Prof. G.A.J. Amaratunga

Number of items: 246.

Article

Khaderbad, MA and Choi, Y and Hiralal, P and Aziz, A and Wang, N and Durkan, C and Thiruvenkatanathan, P and Amaratunga, GA and Rao, VR and Seshia, AA (2012) Electrical actuation and readout in a nanoelectromechanical resonator based on a laterally suspended zinc oxide nanowire. Nanotechnology, 23. 025501-.

Kim, TH and Cho, KS and Lee, EK and Lee, SJ and Chae, J and Kim, JW and Kim, DH and Kwon, JY and Amaratunga, G and Lee, SY and Choi, BL and Kuk, Y and Kim, JM and Kim, K (2011) Full-colour quantum dot displays fabricated by transfer printing. NAT PHOTONICS, 5. pp. 176-182. ISSN 1749-4885

Hiralal, P and Wang, HL and Unalan, HE and Liu, YL and Rouvala, M and Wei, D and Andrew, P and Amaratunga, GAJ (2011) Enhanced supercapacitors from hierarchical carbon nanotube and nanohorn architectures. J MATER CHEM, 21. pp. 17810-17815. ISSN 0959-9428

Pritesh, H and Sina, S-Y and Bernhard C, B and Haolan, W and Stephan, H and K G Upul, W and Gehan A J, A (2011) Nanostructured hematite photoelectrochemical electrodes prepared by the low temperature thermal oxidation of iron. Solar Energy Materials and Solar Cells, 95. pp. 1819-1825. ISSN 0927-0248

Bishop, JDK and Amaratunga, GAJ and Rodriguez, C (2010) Linking energy policy, electricity generation and transmission using strong sustainability and co-optimization. ELECTR POW SYST RES, 80. pp. 633-641. ISSN 0378-7796

Hiralal, P and Imaizumi, S and Unalan, HE and Matsumoto, H and Minagawa, M and Rouvala, M and Tanioka, A and Amaratunga, GAJ (2010) Nanomaterial-Enhanced All-Solid Flexible Zinc-Carbon Batteries. ACS NANO, 4. pp. 2730-2734. ISSN 1936-0851

Li, C and Zhang, Y and Mann, M and Hiralal, P and Unalan, HE and Lei, W and Wang, BP and Chu, DP and Pribat, D and Amaratunga, GAJ and Milne, WI (2010) Stable, self-ballasting field emission from zinc oxide nanowires grown on an array of vertically aligned carbon nanofibers. APPL PHYS LETT, 96. -. ISSN 0003-6951

Santra, S and Guha, PK and Ali, SZ and Hiralal, P and Unalan, HE and Covington, JA and Amaratunga, GAJ and Milne, WI and Gardner, JW and Udrea, F (2010) ZnO nanowires grown on SOI CMOS substrate for ethanol sensing. SENSOR ACTUAT B-CHEM, 146. pp. 559-565. ISSN 0925-4005

Bishop, JDK and Amaratunga, GAJ and Rodriguez, C (2010) Quantifying the limits of HANPP and carbon emissions which prolong total species well-being. Environment, Development and Sustainability, 12. pp. 213-231. ISSN 1387-585X

Roy, D and Chhowalla, M and Hellgren, N and Amaratunga, GAJ (2009) Does hydrogen change the fullerenelike structure in CNx thin films? J VAC SCI TECHNOL A, 27. pp. 1227-1230. ISSN 0734-2101

Unalan, HE and Zhang, Y and Hiralal, P and Dalal, S and Chu, DP and Eda, G and Teo, KBK and Chhowalla, M and Milne, WI and Amaratunga, GAJ (2009) Zinc oxide nanowire networks for macroelectronic devices. APPL PHYS LETT, 94. -. ISSN 0003-6951

Wang, N and Zhang, Y and Yano, K and Durkan, C and Plank, N and Welland, ME and Unalan, HE and Mann, M and Amaratunga, GA and Milne, WI (2009) Direct measurement of charge transport through helical poly(ethyl propiolate) nanorods wired into gaps in single walled carbon nanotubes. Nanotechnology, 20. 105201-.

Jang, JE and Cha, SN and Butler, TP and Sohn, JI and Kim, JW and Jin, YW and Amaratunga, GAJ and Jung, JE and Kim, JM (2009) A Characterization Study of a Nanowire-Network Transistor with Various Channel Layers. ADV MATER, 21. 4139-+. ISSN 0935-9648

Zhou, H and Colli, A and Ahnood, A and Yang, Y and Rupesinghe, N and Butler, T and Haneef, I and Hiralal, P and Nathan, A and Amaratunga, GAJ (2009) Arrays of Parallel Connected Coaxial Multiwall-Carbon-Nanotube-Amorphous-Silicon Solar Cells. ADV MATER, 21. 3919-+. ISSN 0935-9648

Matsumoto, H and Suzuki, K and Tsuboi, K and Minagawa, M and Tanioka, A and Hayashi, Y and Fukuzono, K and Amaratunga, GAJ (2009) Efficient carbon nanotube field emitter using electrospun carbon nanofibers as a flexible electrode. Materials Research Society Symposium Proceedings, 1173. pp. 7-12. ISSN 0272-9172

Unalan, HE and Zhang, Y and Hiralal, P and Dalal, S and Chu, D and Eda, G and Teo, KBK and Chhowalla, M and Milne, WI and Amaratunga, GAJ (2009) Zinc oxide nanowire networks for macroelectronic devices. Applied Physics Letters, 94. ISSN 0003-6951

Jang, JE and Cha, SN and Choi, Y and Butler, TP and Kang, DJ and Hasko, DG and Jung, JE and Jin, YW and Kim, JM and Amaratunga, GAJ (2008) Nanoelectromechanical switch with low voltage drive. APPL PHYS LETT, 93. -. ISSN 0003-6951

Suzuki, K and Matsumoto, H and Minagawa, M and Tanioka, A and Hayashi, Y and Fukuzono, K and Amaratunga, GAJ (2008) Carbon nanotubes on carbon fabrics for flexible field emitter arrays. APPL PHYS LETT, 93. -. ISSN 0003-6951

Rodriguez, C and Amaratunga, GAJ (2008) Long-lifetime power inverter for photovoltaic AC modules. IEEE T IND ELECTRON, 55. pp. 2593-2601. ISSN 0278-0046

Jang, JE and Cha, SN and Choi, Y and Kang, DJ and Hasko, DG and Jung, JE and Kim, JM and Amaratunga, GAJ (2008) A nanogripper employing aligned multiwall carbon nanotubes. IEEE T NANOTECHNOL, 7. pp. 389-393. ISSN 1536-125X

Unalan, HE and Hiralal, P and Rupesinghe, N and Dalal, S and Milne, WI and Amaratunga, GAJ (2008) Rapid synthesis of aligned zinc oxide nanowires. NANOTECHNOLOGY, 19. -. ISSN 0957-4484

Bishop, JDK and Amaratunga, GAJ (2008) Evaluation of small wind turbines in distributed arrangement as sustainable wind energy option for Barbados. ENERG CONVERS MANAGE, 49. pp. 1652-1661. ISSN 0196-8904

Kato, N and Masuzawa, T and Kudo, Y and Kuwajima, Y and Yamaguchi, H and Okano, K and Yamada, T and Saito, L and Butler, T and Rupesinghe, NL and Amaratunga, GAJ (2008) Sensitivity to red/green/blue illumination of amorphous selenium based photodetector driven by nitrogen (N)-Doped CVD diamond. DIAM RELAT MATER, 17. pp. 95-99. ISSN 0925-9635

Eda, G and Unalan, HE and Rupesinghe, N and Amaratunga, GAJ and Chhowalla, M (2008) Field emission from graphene based composite thin films. APPL PHYS LETT, 93. -. ISSN 0003-6951

Wei, D and Zhang, Y and Yang, Y and Hasko, DG and Chu, D and Teo, KB and Amaratunga, GA and Milne, WI (2008) Transformation of unipolar single-walled carbon nanotube field effect transistors to ambipolar induced by polystyrene nanosphere assembly. ACS Nano, 2. pp. 2526-2530.

Hiralal, P and Unalan, HE and Wijayantha, KGU and Kursumovic, A and Jefferson, D and MacManus-Driscoll, JL and Amaratunga, GAJ (2008) Growth and process conditions of aligned and patternable films of iron(III) oxide nanowires by thermal oxidation of iron. NANOTECHNOLOGY, 19. -. ISSN 0957-4484

Unalan, HE and Yang, Y and Zhang, Y and Hiralal, P and Kuo, D and Dalal, S and Butler, T and Cha, SN and Jang, JE and Chremmou, K and Lentaris, G and Wei, D and Rosentsveig, R and Suzuki, K and Matsumoto, H and Minagawa, M and Hayashi, Y and Chhowalla, M and Tanioka, A and Milne, WI and Tenne, R and Amaratunga, GAJ (2008) ZnO Nanowire and WS2 Nanotube Electronics. IEEE T ELECTRON DEV, 55. pp. 2988-3000. ISSN 0018-9383

Rashid, SJ and Tajani, A and Twitchen, DJ and Coulbeck, L and Udrea, F and Butler, T and Rupesinghe, NL and Brezeanu, M and Isberg, J and Garraway, A and Dixon, M and Balmer, RS and Chamund, D and Taylor, P and Amaratunga, GAJ (2008) Numerical Parameterization of Chemical-Vapor-Deposited (CVD) Single-Crystal Diamond for Device Simulation and Analysis. IEEE T ELECTRON DEV, 55. pp. 2744-2756. ISSN 0018-9383

Jang, JE and Cha, SN and Choi, YJ and Kang, DJ and Butler, TP and Hasko, DG and Jung, JE and Kim, JM and Amaratunga, GAJ (2008) Nanoscale memory cell based on a nanoelectromechanical switched capacitor. NAT NANOTECHNOL, 3. pp. 26-30. ISSN 1748-3387

Unalan, HE and Wei, D and Suzuki, K and Dalal, SH and Hiralal, P and Matsumoto, H and Imaizumi, S and Minagawa, M and Tanioka, A and Flewitt, AJ and Milne, WI and Amaratunga, GAJ (2008) Photoelectrochemical cell using dye sensitized zinc oxide nanowires grown on carbon fibers. Applied Physics Letters, 93. 133116-. ISSN 0003-6951

Bishop, JDK and Amaratunga, GAJ and Rodriguez, C (2008) Using strong sustainability to optimize electricity generation fuel mixes. Energy Policy, 36. pp. 971-980. ISSN 0301-4215

Brosselard, P and Tournier, D and Mihaila, A and Udrea, F and Rashid, SJ and Godignon, P and Amaratunga, GAJ and Millan, J (2007) Bidirectional current 4H-SiC VJFET. Physica Status Solidi C, 4. pp. 1544-1547. ISSN 1610-1634

Robertson, J (2007) Growth of nanotubes for electronics. Materials Today, 10. pp. 36-43. ISSN 1369-7021

Brezeanu, M and Butler, T and Rupesinghe, NL and Amaratunga, GAJ and Rashid, SJ and Udrea, F and Avram, M and Brezeanu, G (2007) Ramp oxide termination structure using high-k dielectrics for high voltage diamond Schottky diodes. Diamond and Related Materials, 16. pp. 1020-1024. ISSN 0925-9635

W I, M and M, M and I Y Y, B and G A J, A and N, DJ and M, A and J T, O and P, L and E, M and L, G and L, H and J P, S and L D, D and F, P and T, W and M, E-G (2006) Carbon nanotubes as electron sources. Physica Status Aolidi (A), 203. pp. 1058-1063. ISSN 0031-8965

Rashid, SJ and Tajani, A and Coulbeck, L and Brezeanu, M and Garraway, A and Butler, T and Rupesinghe, NL and Twitchen, DJ and Amaratunga, GAJ and Udrea, F (2006) Modelling of single-crystal diamond Schottky diodes for high-voltage applications. Diamond and Related Materials, 15. pp. 317-323. ISSN 0925-9635

Malhan, RK and Takeeuchi, M and Kataoka, M and Mihaila, A and Rashid, SJ and Udrea, F and Amaratunga, GAJ (2006) Normally-off trench JFET technology in 4H silicon carbide. Microelectronic Engineering, 83. pp. 107-111. ISSN 0167-9317

Brezeanu, M and Badila, M and Brezeanu, G and Udrea, F and Boianceanu, C and Amaratunga, GAJ and Zekentes, K (2006) Theoretical study of an effective field plate termination for SiC devices based on high-k dielectrics. Material Science Forum, 527-52. pp. 1087-1090. ISSN 0255-5476

Semet, V and Binh, VT and Guillot, D and Teo, KBK and Chhowalla, M and Amaratunga, GAJ and Milne, WI and Legagneux, P and Pribat, D (2005) Reversible electromechanical characteristics of individual multiwall carbon nanotubes. Applied Physics Letters, 87. 223103-. ISSN 0003-6951

E, M and O, G and K B K, T and S H, D and L, G and J P, S and L, H and I Y Y, B and P, V and P, L and G A J, A and W I, M (2005) Achieving high-current carbon nanotube emitters. Nano Letters, 5. pp. 2135-2138. ISSN 1530-6984

Udugampola, NK and McMahon, RA and Amaratunga, GAJ (2005) Analysis and design of the dual-gate inversion layer emitter transistor. IEEE Transactions on Electron Devices, 52. pp. 99-105. ISSN 0018-9383

Saito, I and Oonuki, K and Yamada, T and Aono, M and Butler, T and Rupesinghe, NL and Amaratunga, GAJ and Milne, WI and Okano, K (2005) Anneal-induced degradation of amorphous selenium characterized by photoconductivity measurements. Japanese Journal of Applied Physics: Part 2: Letters, 44. L334-L337. ISSN 0021-4922

Brezeanu, M and Rashid, SJ and Butler, T and Rupesinghe, NL and Udrea, F and Okano, K and Amaratunga, GAJ and Twitchen, DJ and Tajani, A and Wort, C (2005) Optically triggered Schottky barrier diodes in single crystal diamond. Diamond and Related Materials, 14. pp. 499-503. ISSN 0925-9635

Brezeanu, G and Boianceanu, C and Brezeanu, M and Mihalia, A and Udrea, F and Amaratunga, GAJ (2005) Performance of SiC cascode switches with Si MOS gate. Material Science Forum, 483-48. pp. 825-828. ISSN 0255-5476

Anderle, M and Amaratunga, GAJ and Milne, WI (2005) Preface. Diamond and Related Materials, 14. p. v-. ISSN 0925-9635

Bell, MS and Lacerda, RG and Teo, KBK and Rupesinge, NL and Amaratunga, GAJ and Milne, WI and Chhowalla, M (2004) Plasma composition during plasma-enhanced chemical vapor deposition of carbon nanotubes. Applied Physics Letters, 85. pp. 1137-1139. ISSN 0003-6951

Ducati, C and Alexandrou, I and Chhowalla, M and Robertson, J and Amaratunga, GAJ (2004) Role of the catalytic particle in growth of carbon nanotubes by plasma enhanced chemical vapour deposition. Journal of Applied Physics, 95. pp. 6387-6391. ISSN 0021-8979

Teo, KBK and Lacerda, RG and Yang, MH and Teh, AS and Robinson, LAW and Dalal, SH and Rupesinghe, NL and Chhowalla, M and Lee, SB and Jefferson, DA and Hasko, DG and Amaratunga, GAJ and Milne, WI and Legagneux, P and Gangloff, L and Minoux, E and Schnell, JP and Pribat, D (2004) Carbon nanotube technology for solid state and vacuum electronics. IEE Proceedings: Circuits, Devices and Systems, 151. pp. 443-451. ISSN 1350-2409

Lacerda, RG and Teo, KBK and Teh, AS and Yang, MH and Dalal, SH and Jefferson, DA and Durrell, JH and Rupesinghe, NL and Roy, D and Amaratunga, GAJ and Milne, WI and Wyczisk, F and Legagneux, P (2004) Thin-film metal catalyst for the production of multi-wall and single-wall carbon nanotubes. Journal of Applied Physics, 96. pp. 4456-4462. ISSN 0021-8979

Lacerda, RG and Teh, AS and Yang, MH and Teo, KBK and Rupesinghe, NL and Dalal, SH and Koziol, KKK and Roy, D and Amaratunga, GAJ and Milne, WI and Chhowalla, M and Hasko, DG and Wyczisk, F and Legagneux, P (2004) Growth of high-quality single-wall carbon nanotubes without amorphous carbon formation. Applied Physics Letters, 84. pp. 269-271. ISSN 0003-6951

Azar, R and Udrea, F and Ng, WT and Dawson, F and Findlay, W and Waind, P and Amaratunga, GAJ (2004) Advanced electro-thermal SPICE modelling of large power IGBTs. IEE Proceedings - Circuits, Devices and Systems, 151. pp. 249-254. ISSN 1350-2409

Milne, WI and Teo, KBK and Amaratunga, GAJ and Lacerda, R and Legagneux, P and Pirio, G and Semet, V and Binh, T (2004) Aligned carbon nanotubes/fibers for applications in vacuum microwave devices. Current Applied Physics, 4. pp. 513-517. ISSN 1567-1739

Udugampola, UNK and McMahon, RA and Udrea, F and Sheng, K and Amaratunga, GAJ and Narayanan, EMS and Hardikar, S (2004) Dual gate lateral inversion layer emitter transistor for power and high voltage integrated circuits. IEE Proceedings - Circuits, Devices and Systems, 151. pp. 203-206. ISSN 1350-2409

Teo, KBK and Hash, DB and Lacerda, RG and Rupesinghe, NL and Bell, MS and Dalal, SH and Bose, D and Govindan, TR and Cruden, BA and Chhowalla, M and Amaratunga, GAJ and Meyyappan, JM and Milne, WI (2004) The significance of plasma heating in carbon nanotube and nanofiber growth. Nano Letters, 4. pp. 921-926. ISSN 1530-6984

Rupesinghe, NL and Chhowalla, M and Teo, KBK and Amaratunga, GAJ (2003) Field emission vacuum power switch using vertically aligned carbon nanotubes. Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 21. pp. 338-343. ISSN 1071-1023

Chhowalla, M and Wang, H and Sano, N and Teo, KBK and Lee, SB and Amaratunga, GAJ (2003) Carbon onions: carriers of the 217.5nm interstellar absorption feature. Physical Review Letters, 90. ISSN 0031-9007

Teh, AS and Lee, SN and Chhowalla, M and Milne, WI and Hasko, DG and Ahmed, H and Amaratunga, GAJ (2003) Fabrication of carbon nanotube lateral field emitters. Nanotechnology, 14. pp. 192-195. ISSN 0957-4484

Riley, DJ and Mann, M and Maclaren, DA and Dastoor, PC and Allison, W and Teo, KBK and Amaratunga, GAJ and Milne, WI (2003) Helium detection via field ionization from carbon nanotubes. Nano Letters, 3. pp. 1455-1458. ISSN 1530-6984

Teh, WH and Smith, CG and Teo, KBK and Lacerda, G and Amaratunga, GAJ and Milne, WI and Castignolles, M and Loiseau, A (2003) Integrating vertically aligned carbon nanotubes on micromechanical structures. Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 21. pp. 1380-1383. ISSN 1071-1023

Teo, KBK and Lee, SB and Chhowalla, M and Semet, V and Binh, VT and Groening, O and Castignolles, M and Loiseau, A and Pirio, G and Legagneux, P and Pribat, D and Hasko, DG and Ahmed, H and Amaratunga, GAJ and Milne, WI (2003) Plasma enhanced chemical vapour deposition carbon nanotubes/nanofibres — how uniform do they grow? Nanotechnology, 14. pp. 204-211. ISSN 0957-4484

L, G and E, M and K B K, T and P, V and V T, S and V T, B and M H, Y and I Y Y, B and G, L and G, P and J P, S and D, P and D G, H and G A J, A and W I, M and P, L (2003) Self-aligned, gated arrays of individual nanotube and nanowire emitters. Nano Letters, 4. pp. 1575-1579. ISSN 1530-6984

Lau, KS and Bico, J and Teo, KBK and Chhowalla, M and Amaratunga, GAJ and Milne, WI and McKinley, GH and Gleason, KK (2003) Superhydrophobic carbon nanotube forests. Nano Letters, 3. pp. 1701-1706. ISSN 1530-6984

Lee, SB and Robinson, LAW and Teo, KBK and Chhowalla, M and Amaratunga, GAJ and Milne, WI and Hasko, DG and Ahmed, H (2003) Suspended multiwalled carbon nanotubes as self-aligned evaporation masks. Journal of Nanoscience and Nanotechnology, 3. pp. 325-328. ISSN 1550-7033

Huang, S and Udrea, F and Amaratunga, GAJ (2003) A comparative investigation of the MCST with MCT and IGBT. Solid State Electronics, 47. pp. 1429-1436. ISSN 0038-1101

Yokoyama, Y and Li, X and Sheng, K and Mihaila, A and Traikovic, T and Udrea, F and Amaratunga, GAJ and Okano, K (2003) A field effect transistor using highly nitrogen-doped CVD diamond for power device applications. Applied Surface Science, 216. pp. 483-489. ISSN 0169-4332

Mihaila, A and Udrea, F and Brezeanu, G and Amaratunga, GAJ (2003) A numerical comparison between MOS control and junction control high voltage devices in SiC technology. Solid State Electronics, 47. pp. 607-615. ISSN 0038-1101

Ducati, I and Alexandrou, M and Chhowalla, M and Amaratunga, GAJ and Robertson, J (2002) Temperature selective growth of carbon nanotubes by CVD. Journal of Applied Physics, 92. pp. 3299-3303. ISSN 0021-8979

Semet, V and Binh, VT and Vincent, P and Guillot, D and Teo, KBK and Chhowalla, M and Amaratunga, GAJ and Milne, WI and Legagneux, P and Pribat, D (2002) Field electron emission from individual carbon nanotubes of a vertically aligned array. Applied Physics Letters, 81. pp. 343-345. ISSN 0003-6951

Yuan, X and Udrea, F and Coulbeck, L and Waind, PR and Amaratunga, GAJ (2002) Analysis of lifetime control in high-voltage IGBTs. Solid State Electronics, 46. pp. 75-81. ISSN 0038-1101

Teo, KBK and Chhowalla, M and Amaratunga, GAJ and Milne, WI and Pirio, G and Legagneux, P and Wyczisk, F and Oliver, J and Pribat, D (2002) Characterisation of plasma-enhanced chemical vapour deposition carbon nanotubes by Auger electron spectroscopy. Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 20. pp. 116-121. ISSN 1071-1023

Lee, SB and Teo, KBK and Robinson, LAW and Teh, AS and Chhowalla, M and Hasko, DG and Amaratunga, GAJ and Milne, WI and Ahmed, H (2002) Characteristics of multi-walled carbon nanotube structures fabricated by PMMA suspended dispersion. Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 20. pp. 2773-2776. ISSN 1071-1023

Udrea, F and Udugampola, UNK and Sheng, K and Mcmahon, RA and Amaratunga, GAJ and Narayanan, EMS and De Souza, MM and Hardikar, S (2002) Experimental demonstration of an ultra-fast double gate inversion layer emitter transistor. IEEE Electron Device Letters, 23. pp. 725-727. ISSN 0741-3106

Pirio, G and Legagneux, P and Pribat, D and Teo, KBK and Chhowalla, M and Amaratunga, GAJ (2002) Fabrication and electrical characteristics of carbon nanotube field emission microcathodes with an integrated gate electrode. Nanotechnology, 13. pp. 1-4. ISSN 0957-4484

Teo, KBK and Chholwalla, M and Amaratunga, GAJ and Milne, WI and Priro, G and Legagneux, P and Wyczisk, F and Pribat, D and Hasko, DG (2002) Field emission from dense, sparse and patterned arrays of carbon nanofibers. Applied Physics Letters, 80. pp. 2011-2013. ISSN 0003-6951

Lee, SB and Teo, KBK and Chhowalla, M and Hasko, DG and Amaratunga, GAJ and Milne, WI and Ahmed, H (2002) Study of multi-walled carbon nanotube structures fabricated by PMMA suspended dispersion. Microelectronic Engineering, 61-62. pp. 475-483. ISSN 0167-9317

Yuan, X and Trajkovic, T and Udrea, F and Thomson, J and Waind, PR and Taylor, P and Amaratunga, GAJ (2002) Suppression of parasitic JFET effect in trench IGBTs by using a self-aligned p base process. Solid State Electronics, 46. pp. 1907-1912. ISSN 0038-1101

Huang, S and Amaratunga, GAJ and Udrea, F (2002) The injection efficiency controlled IGBT. IEE Electron Device Letters, 23. pp. 88-90. ISSN 0741-3106

Chhowalla, M and Ducati, C and Rupesinghe, NL and Teo, KBK and Amaratunga, GAJ (2001) Field emission from short and stubby vertically aligned carbon nanotubes. Applied Physics Letters, 79. pp. 2079-2081. ISSN 0003-6951

Milne, WI and Teo, KBK and Chhowalla, M and Amaratunga, GAJ and Yuan, J and Robertson, J and Legagneax, P and Pribat, D and Bruenger, W and Trautmann, V (2001) Investigating carbon materials for use as the electron emission source in a parallel electron-beam lithography system. Current Applied Physics, 1. pp. 317-320. ISSN 1567-1739

Ionicioiu, R and Amaratunga, GAJ and Udrea, F (2001) Quantum computation with ballistic electrons. International Journal of Modern Physics B, 15. pp. 125-133. ISSN 0217-9792

Huang, S and Sheng, K and Amaratunga, GAJ and Udrea, F (2001) A dynamic n-buffer insulated gate bipolar transistor. Solid-State Electronics, 45. pp. 173-182. ISSN 0038-1101

Brezeanu, M and Badila, M and Tudor, B and Milan, J and Godignon, SJ and Udrea, F and Amaratunga, GAJ and Mihaila, A (2001) Accurate modeling and parameter extraction for 6H-SiC Schottky barrier diodes (SBDs) with nearly ideal breakdown voltage. IEEE Transactions on Electron Devices, 48. pp. 2148-2153. ISSN 0018-9383

Chhowalla, M and Teo, KBK and Ducati, C and Rupesinghe, NL and Amaratunga, GAJ and Ferrari, AC and Roy, D and Robertson, J and Milne, WI (2001) Growth process conditions of vertically aligned carbon nanotubes using plasma enhanced chemical vapor deposition. Journal of Applied Physics, 90. pp. 5308-5317. ISSN 0021-8979

Trajkovic, T and Udrea, F and Waind, PR and Thomson, J and Amaratunga, GAJ and Milne, WI (2001) Optimum design of 1.4 kV non-punch-through trench IGBTs: the next generation of high-power switching devices. IET Proceedings on Circuits Devices and Systems, 148. pp. 71-74. ISSN 1350-2409

Trajkovic, T and Udrea, F and Waind, PR and Thomson, J and Amaratunga, GAJ and Milne, WI (2001) Optimum design of 1.4 kV non-punch-through trench IGBTs: the next generation of high-power switching devices. I E T Circuits, Devices and Systems, 148. pp. 71-74. ISSN 1350-2409

Teo, KBK and Chhowalla, M and Amaratunga, GAJ and Milne, WI and Pirio, G and Legagneux, P and Wyczisk, F and Pribat, D (2001) Preferential growth of carbon nanotubes/nanofibers using lithographically patterned catalysts. Materials Research Society. Symposium Proceedings, 675. W9.1-. ISSN 1526-2421

Huang, S and Amaratunga, GAJ and Udrea, F and Sheng, K and Waind, P and Coulbeck, L and Taylor, P (2001) A dual-channel IEGT. Microelectronics Journal, 32. pp. 755-761. ISSN 0026-2692

Huang, S and Amaratunga, GAJ and Udrea, F (2001) A novel single gate MOS controlled current saturated thyristor. IEE Electron Device Letters, 22. pp. 438-440. ISSN 0741-3106

Sheng, K and Udrea, F and Amaratunga, GAJ (2000) Optimum carrier distribution of the IGBT. Solid State Electronics, 44. pp. 1573-1583. ISSN 0038-1101

Chhowalla, M and Ferrari, AC and Robertson, J and Amaratunga, GAJ (2000) Evolution of sp2 bonding with deposition temperature in tetrahedral amorphous carbon studied by Raman spectroscopy. Applied Physics Letters, 76. pp. 1419-1421. ISSN 0003-6951

Huang, S and Amaratunga, GAJ and Udrea, F (2000) Analysis of SEB and SEGR in super-junction MOSFETs. IEEE Transactions on Nuclear Science, 47. pp. 2640-2647. ISSN 0018-9499

Flewitt, AJ and Froggatt, M and Stephenson, A and Milne, WI and Welland, ME (1998) In-situ scanning tunnelling microscopy of hydrogenated amorphous silicon and microcrystalline silicon. Applied Physics A: Materials Science and Processing, 66. S1101-S1105. ISSN 0947-8396

Chhowalla, M and Robertson, J and Chen, CW and Silva, SRP and Davis, CR and Amaratunga, GAJ and Milne, WI (1997) Influence of ion energy and substrate temperature on the optical and electronic properties of tetrahedral amorphous carbon (ta-C) films. Journal of Applied Physics, 81. pp. 139-145. ISSN 0021-8979

Clough, FJ and Milne, WI and Kleinsorge, B and Robertson, J and Amaratunga, GAJ and Roy, BN (1996) Tetrahedrally bonded amorphous carbon (ta-C) thin film transistors. Electronics Letters, 32. 498-. ISSN 0013-5194

Amaratunga, GAJ and Robertson, J and Veerasamy, VS and Milne, WI and McKenzie, DR (1995) Gap states, doping and bonding in tetrahedral amorphous carbon. Diamond and Related Materials, 4. pp. 637-640. ISSN 0925-9635

Veerasamy, V and Amaratunga, GAJ and Milne, WI and McKenzie, H and Park, JS (1995) Properties of n-type tetrahedral amorphous carbon (ta-C)/p-type crystalline silicon heterojunction diodes. IEEE Transactions on Electron Devices, 42. pp. 577-585. ISSN 0018-9383

Davis, C and Veerasamy, V and Amaratunga, GAJ and Milne, WI and McKenzie, D (1994) Properties of tetrahedral amorphous carbon films deposited in a filtered cathodic arc in the presence of hydrogen. Philosophical Magazine: Part B, 69. pp. 1121-1131. ISSN 1364-2812

Veerasamy, VS and Amaratunga, GAJ and Milne, WI and Park, JS and MacKenzie, H (1994) Photoresponse characteristics of n-type tetrahedral amorphous carbon/p-type Si heterojunction diodes. Applied Physics Letters, 64. pp. 2297-2299. ISSN 0003-6951

Davis, C and Veerasamy, V and Amaratunga, GAJ and Milne, WI and McKenzie, D (1994) Electronic density of states in highly tetrahedral amorphous carbon. Solid-State Electronics, 37. pp. 319-326. ISSN 0038-1101

Silva, SRP and Amaratunga, GAJ and Woodburn, CN and Welland, ME and Haq, S (1994) Quantum size effects in amorphous diamond-like carbon superlattices. Japanese Journal of Applied Physics, Part 1, 33, 12. pp. 6458-6465. ISSN 0021-4922

Veerasamy, V and Amaratunga, GAJ and Milne, WI and Weiler, M and Park, JS (1994) A distributed carbon cathodic vacuum arc. Surface and Coatings Technology, 68-69. pp. 304-308. ISSN 0257-8972

Fallon, PJ and Veerasamy, VS and Davis, C and Amaratunga, GAJ and Milne, WI and Robertson, J and Koskinen, J (1993) Properties of filtered-ion-beam-deposited diamondlike carbon as a function of ion energy. Physical Review B (Condensed Matter and Materials Physics), 48. pp. 4777-4782. ISSN 0163-1829

Veerasamy, VS and Amaratunga, GAJ and Milne, WI and Davis, C and Silva, SRP and MacKenzie, H (1993) Photoconductivity in highly tetrahedral diamondlike amorphous carbon. Applied Physics Letters, 63. pp. 370-372. ISSN 0003-6951

Veerasamy, VS and Amaratunga, GAJ and Milne, WI and Hewitt, P and Fallon, PJ and McKenzie, DR and Davis, C (1993) Optical and electronic properties of amorphous diamond. Diamond and Related Materials, 2. pp. 782-787. ISSN 0925-9635

Veerasamy, VS and Amaratunga, GAJ and Davis, C and Timbs, AE and Milne, WI and McKenzie, AR (1993) n-type doping of highly tetrahedral diamond-like amorphous carbon. Journal of Physics: Condensed Matter, 5. L169-L174. ISSN 0953-8984

Amaratunga, GAJ and Veerasamy, VS and Milne, WI and Davis, CA and McKenzie, DR and Yuan, J and Weiler, M (1993) Doping of highly tetrahedral amorphous carbon. Journal of Non-Crystalline Solids, 164-16. pp. 1119-1122. ISSN 0022-3093

Veerasamy, VS and Amaratunga, GAJ and Milne, WI and Fallon, PJ (1993) Influence of carbon ion energy on properties of highly tetrahedral diamond-like carbon. Journal of Non-Crystalline Solids, 164-16. pp. 1111-1114. ISSN 0022-3093

Sankara Narayanan, M and Amaratunga, GAJ and Milne, WI (1993) CMOS compatible shorted anode auxiliary cathode lateral insulated gate bipolar transistors. IEEE Transactions on Electron Devices, 40. pp. 1880-1883. ISSN 0018-9383

Veerasamy, VS and Yuan, J and Amaratunga, GAJ and Milne, WI and Gilkes, KW and Weiler, M and Brown, LM (1993) Nitrogen doping of highly tetrahedral amorphous carbon. Physical Review B: Condensed Matter and Materials Physics, 48. pp. 17954-17959. ISSN 1098-0121

Veerasmy, VS and Amaratunga, GAJ and Milne, WI (1993) Plasma motion in a filtered cathodic vacuum arc. IEEE Transactions on Plasma Science, 21. pp. 322-328. ISSN 0093-3813

Welland, ME and McKinnon, AW and Amaratunga, GAJ (1992) Scanning tunnelling microscopy and atomic force microscopy of carbondiamond films. Diamond and Related Materials, 1. pp. 529-534. ISSN 0925-9635

Huang, Q and Amaratunga, GAJ and Milne, WI (1992) MOS controlled current interruption. Solid-State Electronics, 35. pp. 187-191. ISSN 0038-1101

Huang, Q and Amaratunga, GAJ and Sankara Narayanan, EM and Milne, WI and Humphrey, J and Starbuck, C (1992) Monolithic integration of 5 V CMOS and high-voltage devices. IEEE Electron Device Letters, 13. pp. 575-577. ISSN 0741-3106

Sankara Narayanan, EM and Amaratunga, GAJ and Milne, WI and Huang, Q (1991) Analysis of CMOS-compatible lateral insulated base transistors. IEEE Transactions on Electron Devices, 38. pp. 1624-1632. ISSN 0018-9383

Huang, Q and Sankara Narayanan, EM and Amaratunga, GAJ and Milne, WI (1991) CMOS compatible shorted anode auxiliary cathode lateral insulated gate bipolar transistors. IEEE Transactions on Electron Devices, 38. pp. 1612-1618. ISSN 0018-9383

Huang, Q and Sankara Narayanan, EM and Amaratunga, GAJ and Milne, WI (1991) Simulation of reverse breakdown in planar p-n junctions. Solid-State Electronics, 34. pp. 983-993. ISSN 0038-1101

Amaratunga, GAJ and Welland, ME (1990) Electron beam defined delamination and ablation of carbon-diamond thin films on silicon. Journal of Applied Physics, 68. pp. 5140-5145. ISSN 0021-8979

Amaratunga, GAJ and Milne, WI and Putnis, A (1990) Heterojunction diodes formed using thin-film C containing polycrystalline diamond and Si. IEEE Electron Device Letters, 11. pp. 33-35. ISSN 0741-3106

Sankara Narayanan, EM and Amaratunga, GAJ and Milne, WI and Huang, Q (1990) Static CMOS latch-up considerations in HVIC design. IEEE Journal of Solid-State Circuits, 25. pp. 613-616. ISSN 0018-9200

Amaratunga, GAJ and Putnis, A and Clay, KJ and Milne, WI (1989) Crystalline diamond growth in thin films deposited from a CH4/Ar rf plasma. Applied Physics Letters, 55. pp. 634-635. ISSN 0003-6951

Amaratunga, GAJ and Milne, WI and Clay, KJ and Putnis, A (1989) The effect of annealing on PECVD SiOx thin films made from N20:SiH4:He gas mixtures. Singapore Journal of Physics, 6. pp. 29-38. ISSN 0217-4251

Book

Amaratunga, Gehan Anil and Robertson, John and Milne, William Ireland, eds. (2000) Proceedings of the 3rd Specialist Meeting on Amorphous Carbon (SMAC2000). Diamond and Related Materials, 10 . Elsevier Press, -.

Milne, William Ireland and Amaratunga, Gehan Anil, eds. (2000) Special issue: Amorphous carbon into the next millennium proceedings of the second international specialist meeting on amorphous carbon. International Journal of Modern Physics, 14 . World Scientific, Singapore, p.21-.

Amaratunga, Gehan Anil and Robertson, John and Milne, William Ireland, eds. (1998) Proceedings of the 1st international specialist meeting on amorphous carbon. World Scientific, pp. 25-30. ISBN 981023449X

Conference or Workshop Item

Choi, Y and Mosley, LE and Min, Y and Amaratunga, GAJ (2010) Carbon nanotube capacitors arrays using high-k dielectrics. In: UNSPECIFIED pp. 221-224..

Hayashi, Y and Fujita, T and Toicunaga, T and Jang, B and Tanemura, M and Amaratunga, GAJ (2009) Growth and Nanoscale Magnetic Properties of Ferromagnetic Nanowire Encapsulated Inside Carbon Nanotubes. In: UNSPECIFIED pp. 2488-2491..

Hayashi, Y and Suzuki, K and Jang, B and Tokunaga, T and Matsumoto, H and Tanemura, M and Tanioka, A and Amaratunga, GAJ (2009) Synthesis and characterization of carbon nanotube grown on flexible and conducting carbon fiber sheet for field emitter. In: UNSPECIFIED pp. 341-344..

Hayashi, Y and Fujita, T and Tokunaga, T and Kaneko, K and Tanemura, M and Butler, T and Rupesinghe, N and Carey, JD and Silva, SRP and Teo, KBK and Amaratunga, GAJ (2008) Microstructure and local magnetic induction of segmented and alloyed Pd/Co nanocomposites encapsulated inside vertically aligned multiwalled carbon nanotubes. In: UNSPECIFIED pp. 1525-1528..

Brezeanu, M and Butler, T and Amaratunga, GAJ and Udrea, F and Rupesinghe, N and Rashid, S (2008) On-state behaviour of diamond Schottky diodes. In: UNSPECIFIED pp. 736-740..

Buttay, C and Rashid, SJ and Johnson, CM and Udrea, F and Amaratunga, GAJ and Ireland, P and Malhan, RK (2007) High performance cooling system for automotive inverters. In: 12th European Conference on Power Electronics and Applications, EPE' 07, 2007-9-2 to 2007-9-5, Aalborg, Denmark pp. 1-9..

Brezeanu, M and Butler, T and Rupesinghe, NL and Amaratunga, GAJ and Rashid, SJ and Udrea, F and Avram, M and Brezeanu, G (2007) Ramp oxide termination structure using high-k dielectrics for high voltage diamond Schottky diodes. In: 17th European Conference on Diamond, Diamond-Like Materials, Carbon Nanotubes, Nitrides and Silicon Carbide, -9-2006 to --, Estoril, Portugal pp. 1020-1024..

Buttay, C and Rashid, SJ and Johnson, CM and Udrea, F and Amaratunga, GAJ and Ireland, P and Malhan, RK (2007) Compact inverter using Silicon carbide devices for high temperature environments. In: IEEE Power Electronics Society Conference, 2007-6- to --, Florida, USA.

Johnson, CM and Buttay, C and Rashid, SJ and Udrea, F and Amaratunga, GAJ and Ireland, P and Malhan, RK (2007) Compact double-side liquid-impingement-cooled integrated power electronic module. In: International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2007-5-27 to 2007-5-30, Jeju Island, Korea.

Udrea, F and Udugampola, UNK and Trajkovic, T and Amaratunga, GAJ (2007) Reverse conducting double gate lateral insulated gate bipolar transistor in SOI based technology. In: 19th International Symposium on Power Semiconductor Devices and ICs (ISPSD'07), 27-5-2007 to 30-5-2007, Jeju Island, South Korea pp. 221-224..

Brezeanu, M and Butler, T and Amaratunga, GAJ and Udrea, F and Rupesinghe, NL and Rashid, SJ (2007) On state behaviour of on-state Schottky diodes. In: New Diamond and Nano Carbons Conference (NDNC), 2007-5- to --, Osaka, Japan.

Buttay, C and Johnson, CM and Rashid, SJ and Udrea, F and Amaratunga, GAJ and Tappin, P and Wright, N and Ireland, P and Yamamoto, P and Takeuchi, Y (2007) High temperature direct double side cooled inverter module for hybrid electric vehicle application. In: 6th European Conference on Silicon Carbide and Related Materials (ECSCRM'06), 2005-9- to --, Newcastle uon Tyne, UK pp. 709-712..

Mihalia, A and Udrea, F and Rashid, SJ and Amaratunga, GAJ and Kataoka, M and Takeuchi, Y and Malhan, RK (2006) Evaluation of Termination Techniques for 4H-SiC Pin Diodes and Trench JFETs. In: 6th European Conference on Silicon Carbide and Related Materials (ECSCRM'06), 2005-9- to --, Newcastle uon Tyne, UK pp. 925-928..

Mihalia, A and Udrea, F and Rashid, SJ and Godignon, P and Brosselard, P and Tournier, D and Millan, J and Amaratunga, GAJ (2006) Numerical and experimental investigation on bipolar operation of 4H-SIC normally-on vertical JFETs. In: 29th International Semiconductor Conference (CAS 2006), 27-9-2006 to 29-9-2006, Sinaia, Romania pp. 297-300..

Brezeanu, G and Visoreanu, A and Brezeanu, M and Udrea, F and Amaratunga, GAJ and Enache, I and Rusu, I (2006) Off-state performances of ideal Schottky barrier diodes (SBD) on diamond and silicon carbide. In: 29th International Semiconductor Conference (CAS 2006), 27-9-2006 to 29-9-2006, Sinaia, Romania p.319-..

Brezeanu, M and Rashid, SJ and Amaratunga, GAJ and Rupesinghe, NL and Butler, T and Udrea, F and Brezeanu, G (2006) On-state behaviour of diamond M-i-P structures. In: 29th International Semiconductor Conference (CAS 2006), 27-9-2006 to 29-9-2006, Sinaia, Romania p.311-..

Brezeanu, M and Butler, T and Rupesinghe, NL and Rashid, SJ and Avram, M and Amaratunga, GAJ and Udrea, F and Dixon, M and Twitchen, D and Garraway, A and Chamund, D and Taylor, P (2006) Single crystal diamond M-i-P diodes for power electronics. In: The 8th International Seminar on Power Semiconductors (ISPS'06), 2006-8- to -- p.103-..

Mihalia, A and Udrea, F and Rashid, SJ and Godignon, P and Brosselard, P and Tournier, D and Millan, J and Amaratunga, GAJ (2006) High temperature characterization of 4H-SiC normally-on vertical JFETs with buried gate and buried field rings. In: 18th International Symposium on Power Semiconductor Devices and ICs (ISPSD '06), 4-6-2006 to 8-6-2006, Napoli, Italy pp. 161-164..

Brezeanu, M and Avram, M and Rashid, SJ and Amaratunga, GAJ and Butler, T and Rupesinghe, NL and Udrea, F and Tajani, A and Dixon, M and Twitchen, DJ and Garraway, A and Chamund, D and Taylor, P and Brezeanu, G (2006) Termination structures for diamond Schottky barrier diodes. In: 18th International Symposium on Power Semiconductor Devices and ICs (ISPSD '06), 2006-6-4 to 2006-6-8, Napoli, Italy -..

Liu, F and Amaratunga, G and Collings, N (2006) A Fourier analysis based synthetic method for in-cylinder pressure estimation. In: Powertrain and Fluid Systems Conference and Exhibition, Session: Electronic Powertrain Controls, -10-2006 to --, Toronto, ON, Canada.

Rashid, SJ and Johnson, CM and Udrea, F and Mihalia, A and Amaratunga, GAJ and Malhan, RK (2005) Analysis of novel packaging techniques for high power electronics in SiC. In: 6th European Conference on Silicon Carbide and Related Materials (ECSCRM'06), 2005-9-3 to 2005-9-7, Newcastle uon Tyne, UK pp. 971-974..

Coulbeck, L and Garraway, A and Taylor, P and Rashid, SJ and Brezeanu, M and Butler, T and Rupesinghe, NL and Udrea, F and Amaratunga, GAJ and Tajani, A and Dixon, M and Twitchen, D (2005) Diamond for high voltage high power electronics, a comparison to other semiconductors. In: 16th European Conference on Diamond, Diamond-like Materials, Carbon Nanotubes, and Nitrides (Diamond 2005), 2005-9-11 to 2005-9-16, Toulouse, France pp. 268-269..

Amaratunga, GAJ and Butler, T and Rupesinghe, NL and Rashid, SJ and Brezeanu, M and Udrea, F and Tajani, A and Twitchen, DJ and Wort, C and Coulbeck, L and Taylor, P and Isberg, J (2005) High voltage synthetic single crystal diamond metal-intrinsic-p+ (MIP) diodes. In: 16th European Conference on Diamond, Diamond-Like Materials, Carbon Nanotubes, Nitrides and Silicon Carbide, 2005-9-11 to 2005-9-16, Grenoble, France.

Rashid, SJ and Tajani, A and Coulbeck, L and Brezeanu, M and Garraway, A and Butler, T and Rupesinghe, NL and Twitchen, DJ and Udrea, F and Taylor, P and Isberg, J and Amaratunga, GAJ (2005) Analysis of carrier transport in synthetic single crystal diamond Schottky diodes. In: 3rd International Conference on Materials for Advanced Technologies, ICMAT' 05, 2005-7-3 to 2005-7-8, Singapore.

Rashid, SJ and Brezeanu, M and Butler, T and Rupesinghe, NL and Udrea, F and Amaratunga, GAJ and Coulbeck, L and Garraway, A and Taylor, P and Twitchen, DJ (2005) Numerical and experimental analysis of single crystal diamond Schottky barrier diodes. In: The 17th International Symposium on Power Semiconductor Devices and ICs, -5-2005 to --, Santa Barbara, CA, USA pp. 315-318..

Napoli, E and Pathirana, V and Udrea, F and Bonnet, G and Trajkovic, T and Amaratunga, GAJ (2005) A compact model for thin SOI LIGBTs: description, experimental verification and system application. In: The 17th International Symposium on Power Semiconductor Devices and ICs, -5-2005 to --, Santa Barbara, CA, USA pp. 95-98..

Brezeanu, M and Rashid, SJ and Butler, T and Rupesinghe, NL and Udrea, F and Garraway, A and Coubeck, L and Taylor, P and Amaratunga, GAJ and Twitchen, DJ (2005) Highly efficient edge terminations for diamond Schottky diodes. In: The 28th International Semiconductor Conference, CAS'05, -10-2005 to --, Sinaia, Romania pp. 319-322..

Nowicki, MA and Lynch, RJ and Amaratunga, G (2005) Stand-alone solar powered electrokinetic fence for preventing heavy metal pollution of groundwater. In: The 20th European Conference on Photovoltaic Solar Energy, -- to -- 5BV.3.23-..

de Silva, DIM and Shrestha, NK and Palmer, PR and Udrea, F and Amaratunga, GAJ and Chamund, D and Coulbeck, L and Waind, P (2004) Accurate conduction and switching loss models of IGBTs for resonant converter design. In: 2004 IEEE 35th Annual Power Electronics Specialists Conference (PESC 04), 20-6-2004 to 25-6-2004, Aachen, Germany pp. 2950-2955..

Udrea, F and Mihalia, A and Rashid, SJ and Amaratunga, GAJ and Takeuchi, Y and Kataoka, M and Malhan, RK (2004) A double channel normally-off SiC JFET device with ultra-low on-state resistance. In: The 6th International Symposium on Power Semiconductor Devices and ICs; ISPSD'04, -5-2004 to --, Kitakyushu, Japan pp. 309-312..

Udrea, F and Trajkovic, T and Amaratunga, GAJ (2004) High voltage devices - a milestone concept in power ICs. In: IEEE International Electron Devices Meeting, 2004-12-13 to 2004-12-15, San Francisco, CA, USA pp. 451-454..

Tuncer, HM and Udrea, F and Amaratunga, GAJ (2004) A 5 GHz low power 0.18 mum CMOS gilbert cell mixer. In: The 27th International Semiconductor Conference (CAS'04), 2004-10- to --, Sinaia, Romania pp. 161-164..

Brezeanu, M and Rashid, SJ and Butler, T and Rupesinghe, NL and Udrea, F and Okano, K and Amaratunga, GAJ and Twitchen, DJ and Tajani, A and Wort, C (2004) High voltage Schottky barrier diodes in synthetic single crystal diamond. In: The 27th International Semiconductor Conference (CAS'04), -10-2004 to --, Sinaia, Romania pp. 385-388..

Udrea, F and Amaratunga, GAJ and Udugampola, N (2004) Inversion layer injection devices from concept to applications in HVICs. In: The 27th International Semiconductor Conference (CAS'04), -10-2004 to --, Sinaia, Romania pp. 9-18..

Boianceanu, C and Brezeanu, G and Udrea, F and Amaratunga, GAJ and Brezeanu, M and Mihalia, A and Draghici, F and Enache, I and Visoreanu, A (2004) SiC device parameters effects on the electrical behaviour of MCascode switch. In: The 27th International Semiconductor Conference (CAS'04), -10-2004 to --, Sinaia, Romania pp. 389-392..

Mihalia, A and Udrea, F and Godignon, P and Brezeanu, G and Malhan, RK and Rusu, A and Millan, J and Amaratunga, GAJ (2003) Hybrid Si/SiC and fully integrated all SiC cascode configured power switches for high voltage applications. In: 10th European Conference on Power Electronics and Applications, EPE' 03, 2003-9-2 to 2003-9-4, Toulouse, France.

Shrestha, NK and De Silva, DIM and Amaratunga, GAJ and Udrea, F and Palmer, PR and Chamund, D and Coulbeck, L and Waind, P (2003) Switching internal dynamics of trench IGBT in ZCS single ended resonant converters. In: 10th European Conference on Power Electronics and Applications, EPE' 03, 2003-9-2 to 2003-9-4, Toulouse, France.

Brezeanu, G and Godignon, P and Millan, J and Udrea, F and Amaratunga, GAJ and Badila, M and Mihalia, A and Braghici, F (2003) Comparison of Schottky and pn 6H-SiC photo-detectors with excellent UV sensitivity and selectivity. In: 13th European Conference on Diamond, Diamond-Like Materials, Carbon Nanotubes, Nitrides and Silicon Carbide, 2002-9- to --, Granada, Spain 8-..

Brezeanu, G and Badila, M and Millan, J and Udrea, F and Godignon, P and Mihaila, A and Amaratunga, GAJ and Brezeanu, M and Boianceanu, C (2003) High performance SiC diodes based on an efficient planar termination. In: The 26th International Semiconductor Conference; CAS 2003, -9-2003 to --, Sinaia, Romania pp. 27-38..

Brezeanu, G and Udrea, F and Amaratunga, GAJ and Mihaila, A and Godignon, P and Millan, J and Badila, M (2003) Improved understanding and optimization of SiC nearly solar blind UV photodiodes. In: The 4th European Conference on European Conference on Silicon Carbide and Related Materials, -9-2002 to --, Linkoping, Sweden pp. 965-968..

Boianceanu, C and Brezeanu, M and Palfi, A and Mihaila, A and Brezeanu, G and Udrea, F and Amaratunga, GAJ and Enache, I (2003) Transient analysis of Si-MOS and SiC-JFET cascode power switches. In: The 26th International Semiconductor Conference; CAS 2003, -9-2003 to --, Sinaia, Romania pp. 227-230..

Pathirana, GPV and Udrea, F and Ng, R and Garner, DM and Amaratunga, GAJ (2003) 3D-RESURF SOI LDMOSFET for RF power amplifiers. In: The 15th International Symposium on Power Semiconductor Devices and ICs; ISPSD '03, -4-2003 to --, Cambridge, UK pp. 278-282..

Azar, R and Udrea, F and Ng, WT and Dawson, F and Finlay, W and Waind, P and Amaratunga, GAJ (2003) Advanced electro-thermal SPICE modelling of large power IGBTS. In: The 15th International Symposium on Power Semiconductor Devices and ICs; ISPSD '03, -4-2003 to --, Cambridge, UK pp. 291-294..

Udugampola, UNK and McMahon, RA and Udrea, F and Sheng, K and Amaratunga, GAJ and Narayanan, EMS and Hardikar, S and De Souza, MM (2003) Dual gate inversion layer emitter transistor for power and high voltage integrated circuits. In: The 15th International Symposium on Power Semiconductor Devices and ICs; ISPSD '03, -4-2003 to --, Cambridge, UK pp. 216-219..

Mihalia, A and Udrea, F and Godignon, P and Brezeanu, G and Malhan, RK and Rusu, A and Millan, J and Amaratunga, GAJ (2003) Towards fully integrated SiC cascode power switches for high voltage applications. In: The 15th International Symposium on Power Semiconductor Devices and ICs; ISPSD '03, -4-2003 to --, Cambridge, UK pp. 379-382..

De Silva, DIM and Shrestha, NK and Azar, R and Amaratunga, GAJ and Udrea, F and Palmer, PR and Chamund, D and Coulbeck, L and Waind, P (2003) Trench gate IGBTs for zero current switching applications. In: The 18th Annual Applied Power Electronics Conference; APEC 2003, -2-2003 to --, Miami Beach, FL, USA pp. 933-937..

De Silva, DIM and Shrestha, NK and Palmer, PR and Udrea, F and Amaratunga, GAJ and Chamund, D and Coulbeck, L and Waind, P (2003) Characterising trench IGBTS for resonant switching conditions using single ended and half-bridge application circuits. In: The 5th International Conference on Power Electronics and Drive Systems; PEDS 2003, -11-2003 to --, Singapore pp. 60-65..

Rashid, SJ and Mihaila, A and Udrea, F and Amaratunga, GAJ (2003) Trench oxide protection for 10 KV 4H-SIC trench MOSFETs. In: The 5th International Conference on Power Electronics and Drive Systems; PEDS 2003, -11-2003 to --, Singapore pp. 1354-1358..

Rashid, SJ and Mihaila, A and Udrea, F and Malhan, RK and Amaratunga, GAJ (2003) Evaluation of trench oxide protection techniques on ultra high voltage (10 kV) 4H-SiC UMOSFETs. In: The 10th International Conference on Silicon Carbide and Related Materials; ICSCRM2003, -10-2003 to --, Lyon, France pp. 1441-1444..

Brezeanu, G and Godignon, P and Dimitrova, E and Raynaud, C and Planson, D and Mihaila, A and Udrea, F and Millan, J and Amaratunga, GAJ and Boianceanu, C (2003) Towards the fabrication and measurement of high sensitivity SiC-UV detectors with oxide ramp termination. In: The 10th International Conference on Silicon Carbide and Related Materials; ICSCRM2003, -10-2003 to --, Lyon, France pp. 1495-1498..

Sheng, K and Udugampola, UNK and Khoo, GFW and Udrea, F and Amaratunga, GAJ and McMahon, RA and Narayanan, EMS and De Souza, MM and Hardikar, S (2002) Dual gate lateral inversion layer emitter transistor. In: 14th International Symposium on Power Semiconductor Devices and ICs, 4-6-2002 to 7-6-2002, Santa Fe, NM, USA pp. 37-40..

Udugampola, UNK and Khoo, GFW and Sheng, K and McMahon, RA and Udrea, F and Amaratunga, GAJ and Narayanan, EMS and Hardikar, S and De Souza, MM (2002) Characterisation of dual gate lateral inversion layer emitter transistor. In: The International Conference on Power Electronics Machines and Drives, -4-2002 to --, Bath, UK pp. 557-561..

Yuan, X and Udrea, F and Coulbeck, L and Waind, P and Amaratunga, GAJ (2002) Optimisation of local lifetime control in high power diode. In: The International Conference on Power Conversion, -4-2002 to --, Osaka, Japan pp. 226-231..

de Silva, DIM and Shrestha, NK and Palmer, PR and Udrea, F and Amaratunga, GAJ and Chamund, D and Coulbeck, L and Waind, P (2002) Characteristics of trench gate and DMOS IGBTs in a ZCS single-ended resonant inverter. In: IEEE International Conference on Semiconductor Electronics 2002 (ICSE 2002), 19-12-2002 to 21-12-2002, Penang, Malaysia pp. 87-91..

Mihalia, A and Udrea, F and Azar, R and Brezeanu, G and Amaratunga, GAJ (2002) Static and dynamic behaviour of SiC JFET/Si MOSFET cascode configuration for high performance power switches. In: The 9th International Conference on Silicon Carbide and Related Materials ( ICSCRM2001), 28-10-2002 to 1-11-2002, Tsukuba, Japan pp. 1239-1242..

Azar, R and Udrea, F and De Silva, M and Amaratunga, GAJ and Ng, WT and Dawson, F and Findlay, W and Waind, P (2002) Advanced SPICE modeling of large power IGBT modules. In: 2002 Industry Applications Conference. 37th IAS General Meeting, 13-10-2002 to 18-10-2002, Pittsburgh, PA, USA pp. 2433-2436..

Brezeanu, G and Udrea, F and Mihaila, A and Amaratunga, GAJ and Millan, J and Godignon, P and Badila, M and Draghici, F and Boianceanu, C and Brezeanu, M (2002) Numerical and analytical study of 6H-SiC detectors with high UV performance. In: The 25th IEEE International Semiconductor Conference, -10-2002 to --, Sinaia, Romania pp. 185-188..

Sheng, K and Udrea, F and Amaratunga, GAJ and Palmer, PR (2001) Behaviour of the CoolMOS device and its body diode. In: The 31st European Solid-State Device Research Conference (ESSDERC'01), 2001-9-11 to 2001-9-13, Nuremburg, Germany pp. 251-254..

Sheng, K and Udrea, F and Amaratunga, GAJ (2001) Double gate 3D AC switch - a new power semiconductor device. In: The 31st European Solid-State Device Research Conference (ESSDERC'01), 2001-9-11 to 2001-9-13, Nuremburg, Germany pp. 407-410..

Trajkovic, T and Udrea, F and Amaratunga, GAJ (2001) Single to double gate TIGBTs - possible road-map to ultra-high voltage bipolar-MOS devices. In: The Bipolar/BiCMOS Circuits and Technology Meeting, -9-2001 to --, Minneapolis, MN, USA pp. 184-187..

Gardner, DM and Udrea, F and Ensell, G and Sheng, K and Popescu, AE and Amaratunga, GAJ and Milne, WI (2001) Failure mechanisms of SOI high-voltage LIGBTs and LDMOSes under unclamped inductive switching. In: The 13th IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD), -6-2001 to --, Osaka, Japan pp. 335-338..

Ng, R and Udrea, F and Sheng, K and Ueno, K and Amaratunga, GAJ and Nishiura, M (2001) Lateral unbalanced super junction (USJ)/3D-RESURF for high breakdown voltage on SOI. In: The 11th IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD), -6-2001 to --, Osaka, Japan pp. 395-398..

Udrea, F and Trajkovic, T and Thomson, J and Coulbeck, L and Waind, PR and Amaratunga, GAJ and Taylor, P (2001) Ultra-high voltage device termination using the 3D RESURF (super-junction) concept - experimental demonstration at 6.5 kV. In: The 11th IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD), -6-2001 to --, Osaka, Japan pp. 129-132..

Yuan, X and Udrea, F and Coulbeck, L and Waind, PR and Amaratunga, GAJ (2001) Modelling of IGBTs with local lifetime control. In: The 1st International Semiconductor Technology Conference, 2001-5- to --, Shanghai, China pp. 422-431..

Yuan, X and Udrea, F and Trajkovic, T and Thomson, J and Waind, P and Taylor, P and Amaratunga, GAJ (2001) Enhanced on-state performance trench IGBT with a self-aligned p base. In: 2001 IEEE Industry Applications Conference (36th IAS Annual Meeting), 30-9-2001 to 4-10-2001, Chicago, IL, USA pp. 1033-1037..

Amaratunga, GAJ and Udrea, F (2001) Power devices for high voltage integrated circuits: new device and technology concepts. In: The 24th International Semiconductor Conference; CAS 2001, -10-2001 to --, Sinaia, Romania pp. 441-448..

Brezeanu, G and Badila, M and Godignon, P and Millan, J and Udrea, F and Mihaila, A and Amaratunga, GAJ (2001) UV detection properties of epitaxial 6H-SiC diodes with oxide ramp termination. In: The 24th International Semiconductor Conference, CAS 2001, -10-2001 to --, Sinaia, Romania pp. 345-348..

Brezeanu, G and Badila, M and Godignon, P and Millan, J and Udrea, F and Mihaila, A and Amaratunga, GAJ (2001) An effective high-voltage termination for SiC planar pn junctions for use in high-voltage devices and UV detectors. In: The 9th International Conference on Silicon Carbide and Related Materials ( ICSCRM2001), -10-2001 to --, Tsukuba, Japan pp. 1301-1304..

Huang, S and Amaratunga, GAJ and Udrea, F and Waind, P and Coulbeck, L and Taylor, P (2001) A new single gate MOS controlled thyristor with current saturation and large SOA. In: The 6th IEEE International Conference on Solid-State and Integrated Circuit Technology, -10-2001 to --, Shanghai, China pp. 162-165..

Ng, R and Udrea, F and Sheng, K and Amaratunga, GAJ (2001) A study of the CoolMOS integral diode: analysis and optimisation. In: The 24th International Semiconductor Conference; CAS 2001, -10-2001 to --, Sinaia, Romania pp. 461-464..

Sheng, K and Udrea, F and Amaratunga, GAJ (2000) Optimum carrier distribution of the IGBT. In: The 9th International Conference on Power Electronics and Motion Control (EPE-PEMC), 5-9-2000 to 7-9-2000, Košice, Slovak Republic pp. 1573-1583..

Sheng, K and Udrea, F and Trajkovic, T and Huang, SM and Amaratunga, GAJ and Waind, P (2000) PT and NPT IGBTs up to 1.2kV - which is optimum? In: The 9th International Conference on Power Electronics and Motion Control (EPE-PEMC), 2000-9-5 to 2000-9-7, Košice, Slovak Republic pp. 204-208..

Mihaila, A and Udrea, F and Brezeanu, G and Azar, R and Amaratunga, GAJ (2000) SiC junction control, an alternative to MOS control high voltage switching devices. In: The 3rd European Conference on Silicon Carbide and Related Materials, -9-2000 to --, Kloster Banz, Germany pp. 723-726..

Sheng, K and Huang, SM and Udrea, F and Amaratunga, GAJ (2000) Quasi-punch-through structure for power semiconductor devices. In: The 3rd International Power Electronics and Motion Control Conference; IPEMC 2000; Vol. 3, -8-2000 to --, Beijing, China pp. 224-228..

Huang, S and Sheng, K and Amaratunga, GAJ and Udrea, F and Waind, P (2000) An experimental and numerical investigation of IGBT blocking characteristics. In: The 3rd International Power Electronics and Motion Control Conference; IPEMC 2000, -8-2000 to --, Beijing, China pp. 407-411..

Udrea, F and Popescu, A and Ng, R and Amaratunga, GAJ (2000) Minority carrier injection across the 3D RESURF junction. In: The 12th International Symposium on Power Semiconductor Devices and ICs; ISPSD 2000, 2000-5- to --, Toulouse, France pp. 321-327..

Trajkovic, T and Udrea, F and Waind, PR and Amaratunga, GAJ (2000) The effect of static and dynamic parasitic charge in the termination area of high voltage devices and possible solutions. In: The 12th International Symposium on Power Semiconductor Devices and ICs; ISPSD 2000, -5-2000 to --, Toulouse, France pp. 263-266..

Brezeanu, G and Badila, M and Tudor, B and Millan, J and Godignon, P and Locatelli, ML and Chante, JP and Amaratunga, GAJ and Udrea, F and Mihaila, A (2000) Accurate modelling of Ni/6H-SiC Schottky barrier diodes (SBD) forward characteristics at high current densities. In: The 23rd International Semiconductor Conference; CAS 2000, -10-2000 to --, Sinaia, Romania pp. 193-196..

Ionicioiu, R and Amaratunga, GAJ and Popescu, A and Udrea, F (2000) Quantum computation with ballistic qubits. In: The 23rd International Semiconductor Conference; CAS 2000, -10-2000 to --, Sinaia, Romania pp. 97-100..

Mihaila, A and Udrea, F and Amaratunga, GAJ and Brezeanu, G (2000) A comprehensive analysis of breakdown mechanisms in 4H-SiC MOSFET and JFET. In: The 23rd International Semiconductor Conference; CAS 2000, -10-2000 to --, Sinaia, Romania pp. 185-188..

Amaratunga, GAJ and Udrea, F and McMahon, RA (1999) Power integrated circuits: devices and applications. In: The Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 26-9-1999 to 28-9-1999, Minneapolis, MN, USA pp. 75-79..

Garner, D and Amaratunga, GAJ and Milne, WI and Veerasamy, V and Ashburn, P (1994) The injection mechanisms arising from the use of tetrahedral amorphous carbon as an emitter for silicon bipolar transistors. In: The 8th International School on Condensed Matter Physics: Electronic, Optoelectronic, and Magnetic Thin Films (ISCMP94), -9-1994 to --, Varna; Bulgaria pp. 381-384..

Silva, SRP and Amaratunga, GAJ and Milne, WI (1994) The microstructure of plasma deposited diamond-like carbon thin films. In: The 8th International School on Condensed Matter Physics: Electronic, Optoelectronic, and Magnetic Thin Films (ISCMP '94), -9-1994 to --, Varna, Bulgaria pp. 495-498..

Huang, Q and Amaratunga, GAJ and Milne, WI (1993) MOS controlled current interuption as a turn off mechanism for thyristors. In: The 7th International School on Condensed Matter Physics (ISCMP): Electronic and Optoelectronic Materials for the 21st Century, -9-1992 to --, Varna, Bulgaria.

Veerasamy, VS and Amaratunga, GAJ and Milne, WI (1993) Optical and electrical properties of diamond films. In: The 7th International School on Condensed Matter Physics (ISCMP): Electronic and Optoelectronic Materials for the 21st Century, -9-1992 to --, Varna, Bulgaria.

Amaratunga, GAJ and Veerasamy, V and Milne, WI and McKenzie, DR and Davis, CA and Weiler, M and Fallon, PJ and Silva, SRP and Koskinen, J and Payne, A (1993) Semiconducting "amorphous diamond". In: The 2nd International Conference on Applications of Diamond Films and Related Materials (ADC'93), -8-1993 to --, Omiya, Japan pp. 353-360..

Sankara Narayanan, EM and Amaratunga, GAJ and Milne, WI and Huang, Q (1989) A novel modified lateral insulated gate transistor structure. In: The 175th Meeting of the Electrochemical Society: Symposium on High Voltage and Smart Power IC’s, -5-1989 to --, Los Angeles, CA, USA p.124-..

Amaratunga, GAJ and Milne, WI and Chan, KK and Clay, KJ and Welland, ME (1989) Carbon-Silicon heterojunctions diodes formed by CH4/Ar rf plasma thin film deposition on Si substrates. In: The MRS International Symposium on Diamond Silicon Carbide and Related Wide Bandgap Semiconductors, -- to --, Boston, MA, USA pp. 377-382..