Article

Tee, EKC and Antoniou, M and Udrea, F and Holke, A and Pilkington, SJ and Pal, DK and Yew, NL and Abidin, WABWZ (2013) 200 V Superjunction N-Type Lateral Insulated-Gate Bipolar Transistor With Improved Latch-Up Characteristics. IEEE Transactions on Electron Devices. ISSN 0018-9383

Tee, EKC and Antoniou, M and Udrea, F and Holke, A and Pilkington, SJ and Pal, DK and Yew, NL and Abidin, WABWZ (2013) 200 v superjunction N-type lateral insulated-gate bipolar transistor with improved latch-up characteristics. IEEE Transactions on Electron Devices, 60. pp. 1412-1415. ISSN 0018-9383

Lophitis, N and Antoniou, M and Udrea, F and Bauer, FD and Nistor, I and Arnold, M and Wikström, T and Vobecký, J (2013) The Destruction Mechanism in GCTs. IEEE Transactions on Electron Devices. ISSN 0018-9383

Lophitis, N and Antoniou, M and Udrea, F and Bauer, FD and Nistor, I and Arnold, M and Wikstrom, T and Vobecky, J (2013) The destruction mechanism in GCTs. IEEE Transactions on Electron Devices, 60. pp. 819-826. ISSN 0018-9383

Kho, ECT and Hoelke, AD and Pilkington, SJ and Pal, DK and Wan Zainal Abidin, WA and Ng, LY and Antoniou, M and Udrea, F (2012) 200-V Lateral Superjunction LIGBT on Partial SOI. IEEE Electron Device Letters. ISSN 0741-3106

Kho, ECT and Hoelke, AD and Pilkington, SJ and Pal, DK and Wan Zainal Abidin, WA and Ng, LY and Antoniou, M and Udrea, F (2012) 200-V lateral superjunction LIGBT on partial SOI. IEEE Electron Device Letters, 33. pp. 1291-1293. ISSN 0741-3106

Bauer, F and Nistor, I and Mihaila, A and Antoniou, M and Udrea, F (2012) Superjunction IGBT Filling the Gap Between SJ MOSFET and Ultrafast IGBT. IEEE Electron Device Letters. ISSN 0741-3106

Bauer, F and Nistor, I and Mihaila, A and Antoniou, M and Udrea, F (2012) Superjunction IGBT filling the gap between SJ MOSFET and ultrafast IGBT. IEEE Electron Device Letters, 33. pp. 1288-1290. ISSN 0741-3106

Antoniou, M and Udrea, F and Bauer, F and Mihaila, A and Nistor, I (2011) Towards Achieving the Soft-Punch-Through Superjunction Insulated-Gate Bipolar Transistor Breakdown Capability. IEEE ELECTR DEVICE L, 32. pp. 1275-1277. ISSN 0741-3106

Antoniou, M and Udrea, F and Bauer, F and Nistor, I (2011) The Soft Punchthrough plus Superjunction Insulated Gate Bipolar Transistor: A High Speed Structure With Enhanced Electron Injection. IEEE T ELECTRON DEV, 58. pp. 769-775. ISSN 0018-9383

Antoniou, M and Udrea, F and Bauer, F and Nistor, I (2010) The Semi-Superjunction IGBT. IEEE ELECTR DEVICE L, 31. pp. 591-593. ISSN 0741-3106

Antoniou, M and Udrea, F and Bauer, F (2010) Robustness of Super Junction structures against cosmic ray induced breakdown. SOLID STATE ELECTRON, 54. pp. 385-391. ISSN 0038-1101

Antoniou, M and Udrea, F and Bauer, F (2010) The Superjunction Insulated Gate Bipolar Transistor Optimization and Modeling. IEEE T ELECTRON DEV, 57. pp. 594-600. ISSN 0018-9383

Conference or Workshop Item

Antoniou, M and Udrea, F and Tee, EKC and Pilkington, S and Pal, DK and Hoelke, A (2012) Compact three-dimensional silicon termination solutions for high voltage SOI SuperJunction. In: UNSPECIFIED pp. 89-92..

Lophitis, N and Antoniou, M and Udrea, F and Nistor, I and Arnold, M and Wikström, T and Vobecky, J (2012) Experimentally validated three dimensional GCT wafer level simulations. In: UNSPECIFIED pp. 349-352..

Antoniou, M and Udrea, F and Bauer, F and Mihaila, A and Nistor, I (2012) Point injection in trench insulated gate bipolar transistor for ultra low losses. In: UNSPECIFIED pp. 21-24..

Bauer, F and Nistor, I and Mihaila, A and Antoniou, M and Udrea, F (2012) SuperJunction IGBTS: An evolutionary step of silicon power devices with high impact potential. In: UNSPECIFIED pp. 27-36..

Antoniou, M and Tee, EKC and Pilkington, SJ and Pal, DK and Udrea, F and Dietrich Hoelke, A (2012) The lateral superjunction PSOI LIGBT and LDMOSFET. In: UNSPECIFIED pp. 351-354..

Antoniou, M and Udrea, F and Tee, EKC and Hao, Y and Pilkington, S and Yaw, KK and Pal, DK and Hoelke, A (2011) Interface Charge Trapping and Hot Carrier Reliability in High Voltage SOI SJ LDMOSFET. In: UNSPECIFIED pp. 336-339..

Lophitis, N and Antoniou, M and Udrea, F and Wikstrom, T and Nistor, I (2011) Turn-off failure mechanism in large area IGCTs. In: UNSPECIFIED pp. 361-364..

Antoniou, M and Udrea, F and Bauer, F and Nistor, I (2010) A new way to alleviate the RC IGBT snapback phenomenon: The SuperJunction Solution. In: UNSPECIFIED pp. 153-156..

Antoniou, M and Udrea, F and Bauer, F (2009) The 3.3kV Semi-SuperJunction IGBT for Increased Cosmic Ray Induced Breakdown Immunity. In: UNSPECIFIED pp. 168-171..

Antoniou, M and Udrea, F and Bauer, F (2008) Spice modelling of the superjunction IGBT. In: UNSPECIFIED.

Antoniou, M and Udrea, F and Bauer, F (2007) Optimisation of superjunction bipolar transistor for ultra-fast switching applications. In: International Symposium on Power Semiconductor Devices and ICs (ISPSD), 27-5-2007 to 30-5-2007, Jeju Island, Korea.

Antoniou, M and Udrea, F and Bauer, F (2007) Optimisation of SuperJunction Bipolar Transistor for ultra-fast switching applications. In: UNSPECIFIED pp. 101-104..

Antoniou, M and Udrea, F (2007) Simulated superior performance of superjuction bipolar transistors. In: UNSPECIFIED pp. 291-296..

Antoniou, M and Udrea, F (2006) Simulated superior performance of the super junction bipolar transistor. In: 29th International Semiconductor Conference (CAS 2006), 27-9-2006 to 29-9-2006, Sinaia, Romania pp. 293-296..