Department of Engineering

Publications by Mr T.P. Butler

Number of items: 7.

Conference or Workshop Item

Brezeanu, M and Butler, T and Rupesinghe, NL and Amaratunga, GAJ and Rashid, SJ and Udrea, F and Avram, M and Brezeanu, G (2007) Ramp oxide termination structure using high-k dielectrics for high voltage diamond Schottky diodes. In: 17th European Conference on Diamond, Diamond-Like Materials, Carbon Nanotubes, Nitrides and Silicon Carbide, -9-2006 to --, Estoril, Portugal pp. 1020-1024..

Brezeanu, M and Butler, T and Amaratunga, GAJ and Udrea, F and Rupesinghe, NL and Rashid, SJ (2007) On state behaviour of on-state Schottky diodes. In: New Diamond and Nano Carbons Conference (NDNC), 2007-5- to --, Osaka, Japan.

Brezeanu, M and Rashid, SJ and Amaratunga, GAJ and Rupesinghe, NL and Butler, T and Udrea, F and Brezeanu, G (2006) On-state behaviour of diamond M-i-P structures. In: 29th International Semiconductor Conference (CAS 2006), 27-9-2006 to 29-9-2006, Sinaia, Romania p.311-..

Brezeanu, M and Butler, T and Rupesinghe, NL and Rashid, SJ and Avram, M and Amaratunga, GAJ and Udrea, F and Dixon, M and Twitchen, D and Garraway, A and Chamund, D and Taylor, P (2006) Single crystal diamond M-i-P diodes for power electronics. In: The 8th International Seminar on Power Semiconductors (ISPS'06), 2006-8- to -- p.103-..

Brezeanu, M and Avram, M and Rashid, SJ and Amaratunga, GAJ and Butler, T and Rupesinghe, NL and Udrea, F and Tajani, A and Dixon, M and Twitchen, DJ and Garraway, A and Chamund, D and Taylor, P and Brezeanu, G (2006) Termination structures for diamond Schottky barrier diodes. In: 18th International Symposium on Power Semiconductor Devices and ICs (ISPSD '06), 2006-6-4 to 2006-6-8, Napoli, Italy -..

Coulbeck, L and Garraway, A and Taylor, P and Rashid, SJ and Brezeanu, M and Butler, T and Rupesinghe, NL and Udrea, F and Amaratunga, GAJ and Tajani, A and Dixon, M and Twitchen, D (2005) Diamond for high voltage high power electronics, a comparison to other semiconductors. In: 16th European Conference on Diamond, Diamond-like Materials, Carbon Nanotubes, and Nitrides (Diamond 2005), 2005-9-11 to 2005-9-16, Toulouse, France pp. 268-269..

Amaratunga, GAJ and Butler, T and Rupesinghe, NL and Rashid, SJ and Brezeanu, M and Udrea, F and Tajani, A and Twitchen, DJ and Wort, C and Coulbeck, L and Taylor, P and Isberg, J (2005) High voltage synthetic single crystal diamond metal-intrinsic-p+ (MIP) diodes. In: 16th European Conference on Diamond, Diamond-Like Materials, Carbon Nanotubes, Nitrides and Silicon Carbide, 2005-9-11 to 2005-9-16, Grenoble, France.

This list was generated on Wed Jan 16 17:14:46 2013 GMT.