ENGINEERING TRIPOS PART IIB – 2012/2013 (module not running this year)

Module 4B18 - Advanced electronic devices

Leader:	Professor M J Kelly (mjk1@eng)
Timing:	Lent Term
Prerequisites:	unknown
Structure:	17 lectures
Assessment:	Material / Format / Timing / Marks Lecture Syllabus / Written exam (1.5 hours) / Start of Easter Term / 100 %

AIMS

1. Introduce the ideas behind modern electronic devices as used in computing and communications (including microwave and radar applications)
2. Describe the relevant technologies for device fabrication
3. Describe the operation and limitations for the various devices
4. Introduce systems considerations leading to choice of devices
5. Describe some current ideas and research

LECTURE SYLLABUS

1. Introduction and Background Materials

2. Homojunctions and Heterojunctions

3. Key Fabrication Technologies

4. Physics of Heterojunctions

5. High-Field, High-Frequency Transport

6. The Deep Submicron Silicon Transistor and Circuits

7. Modern Field Effect Transistors

• (i) Deep Submicron Silicon FETs and GaAs MESFETs

8. Modern Field Effect Transistors

• (ii) Heterojunction Field Effect Transistors

9. Heterojunction Bipolar Transistors

10. Microwave Sources

• (i) Gunn diodes and IMPATT Diodes

11. Microwave Sources

• (ii) Tunnel diodes and tunnel transistor circuits

12. Microwave Detectors

• (i) Schottky and Planar-doped-barrier diodes

13. Microwave Detectors

• (ii) Tunnel detector diodes and others

14. Optoelectronic Device Analogues

15. Choice of Device against requirement

16. Current New Device Ideas

17. The Future

OBJECTIVES

Students should have a sound appreciation of the principles, fabrication, performance and applications of a number of modern electronic devices.

REFERENCES

Please see the Booklist for Group B Courses for references for this module.

Last updated: May 2012

teaching-office@eng.cam.ac.uk