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ENGINEERING TRIPOS PART IIB – 2012/2013
Module 4B2 - Power Microelectronics (not running 2011/12)
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Leader: |
Prof F Udrea (fu@eng) |
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Timing: |
Michaelmas Term |
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Prerequisites: |
None |
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Structure: |
14 Lectures +2 Examples classes |
| Assessment: | Material / Format / Timing / Marks Lecture Syllabus / Written exam (1.5 hours) / Start of Easter Term / 100 % |
Further information to follow
AIMS
The aim of this module is to provide an introduction to the world of modern power semiconductor devices, and their applications in the electronics Industry. Covers material specific to power semiconductor devices not covered in other modules in semiconductors.
LECTURE SYLLABUS
- Introduction
- Power Diodes
- Field Control
- Power Bipolar Devices
- Thyristors
- Power MOS Devices
- Power MOSFET modelling
- Insulted Gate Bipolar Transistors
- IGBTs II
- PowerIntegrated Circuits (PICs
Introduction to power electronics and power devices. Basics of power electronics, power devices and applications. P-N junction theory.
High voltage pn junction theory. Breakdown theory. None punch-through (NPT) and punch-through (PT) high voltage junction. On-state - high level injection. Lifetime. Turn-off reverse recovery
Curvature effects in high voltage junctions, Edge effects, Field plates, Terminations in power devices.
Bipolar Juction transistor (BJT).
The thyristor (concept & technology). The GTO thyristor, Switching aids for transistors and thyristors.
The power MOSFE: Concept, modes of operation. trade-offs.
The power MOSFET modelling, technologies and advanced devices.
The Insulted Gate Bipolar Transistor (IGBT): modes of operation. trade-offs.
The IGBTs, modelling, technologies and advanced concepts.
Power Intergated Circuits (PICS) and High Voltage Integrated Circuits (HVICs): introduction, lateral devices for PICs and HVICs, concepts, modes of operation.
- Understand how the design of power semiconductor devices takes account of high voltage and currents
- Be able to explain the practical operating conditions pertaining to power semiconductor devices
- Be able to analyse power circuit segments
- Know the features of the main types of power electronic devices
- Understand the semiconductor technologies in power devices
COURSEWORK (Optional)
Finite element design and analysis of novel high voltage devices in the HVM Lab led by Dr.F.Udrea.
OBJECTIVES
On completion of the module students should:
REFERENCES
Please see the Booklist for Group F Courses for references for this module.
Last updated: May 2012