ENGINEERING TRIPOS PART IIB – 2009/2010
Module 4B6 - Solid State Devices and Chemical/Biological Sensors
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Leader:
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Dr DP Chu (dpc31@eng) |
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Timing:
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Lent Term
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Prerequisites:
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3B5 and 3B6 useful
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Structure:
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14 lectures (including examples classes)
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| Assessment: |
Material / Format / Timing / Marks
Lecture Syllabus / Written exam (1.5 hours) / Start of Easter Term / 100 %
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AIMS
The aim of this module is to introduce the student to the theory, and design
of MOS Field-Effect Transistors (MOSFETs), based on both single crystal and
thin-film materials. This will be followed by application examples, including chemical/biological sensors in sensor technologies,ferroelectric and magnetic random access memories (FRAM and MRAM) in non-volatile memory technologies, and active matrix liquid crystal displays and micromechanical displays in display technologies. Emphasis will be placed on both device physics and application technology.
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LECTURE SYLLABUS Dr. D. Chu
- MOS Devices Introduction (4L)
Properties of MOS Capacitors,
Capacitance - voltage characteristics; MOSFET structures and operation.
- MOS Devices & Thin Film Transistors (6L)
Short channel and hot
electron effects; Applications and future trends in miniaturising single crystal
devices; Amorphous and polycrystalline silicon and other thin-film transistors. Organic thin-film transistors, Ion-sensitive thin, film trasistors and biosensors.
- Non-Volatile Memory Devices and Displays (5L)
Ferroelectrics and ferroelectric random access memories; Giant magneto-resistance (GMR) and magnetic random access memories. Directly driven liquid crystal displays; Active matrix liquid crystal displays and projectors; Micromechanical projectors; Other types of displays and emerging technologies.
OBJECTIVES
On completion of the module the student should:
- Understand MOSFET
theory and standard approximations;
- Be able to correlate
material properties and conduction mechanisms with the MOSFET electrical
characteristics, for single crystal, amorphous and polycrystalline devices;
- Understand the basic properties of ferroelectrics and its application for memory devices.
- Understand the concept of giant magneto-resistance and its applications including non-volatile memory devices
- Understand the operation of liquid crystal displays;
- Understand the
construction and operation of micromechanical displays, and other emerging display technologies.
References
- Lecture Notes.
- S M Sze;" Physics of Semiconductor", John Wiley,1981, Chapters 7 and 8.But note that there is rather nore than covered in the lectures.
- J Singh : Semiconductor Devices", John Wiley 2001
- Article "Thin -Film Transistors", by P Migliorato, in Encylopedia of Physical Science and Technology, (Excluding the mathematical derivations), distributed at the lectures.
- J F Scott: "Ferroelectric Memories", Springer, 2000.
Please see the Booklist for Group B Courses for references for this module.
Last updated: September 2009
teaching-office@eng.cam.ac.uk
