ENGINEERING TRIPOS PART IIB – 2012/2013

Module 4B7 - VLSI Design, Technology and CAD

AIMS

The aim of this module is to describe the design, technology and manufacture of MOS integrated circuits and future nanoscale electron devices. It will provide a firm foundation for those wishing to pursue careers in applications or in research/development in the field of semiconductor devices/circuits.

LECTURE SYLLABUS

VLSI Design and CAD of MOS Integrated Circuits (6L, Dr D.M. Holburn)

• Challenges of designing complex CMOS circuits.
• Hierarchical design, layout and design rules.
• Parasitic elements, simulation and verification.
• VLSI circuit techniques.
• Case study: a typical i.c. design.

Integrated Devices and VLSI Technology (6L, Prof.M.Kelly)

• Challenges of VLSI technology.
• Example of CMOS: fabrication
• Case study of i.c. technology.
• Recent developments and future prognosis.

COURSEWORK

Either (a) 2 hour laboratory practical to assess the performance of CMOS devices and ring oscillators, with a 4 side report;
or (b) 2 hour hands-on scanning electron microscope examination of devices and circuits, with 4-side report;

OBJECTIVES

On completion of the module students should:

• Have developed an awareness of the requirements for IC technology;
• Understand how device miniaturisation has led to improved device performance and the potential limits to this process;
• Understand the design process for CMOS ICs;
• Appreciate the vital role of CAD in microelectronic design;
• Recognise the potential of VLSI technology in information engineering;
• Understand how performance and cost are related to design and process technology.

REFERENCES

Please see the Booklist for Group B Courses for references for this module.

Last updated: June 2012