Assistant Research Professor in Wide Bandgap Power Devices
Academic Division: Electrical Engineering
Telephone: +44 1223 748311
Email: nd391@cam.ac.uk
Research interests
Dr Donato’s work focuses on enabling high-efficiency, high-voltage, and high-reliability power devices for future energy, transportation, and grid applications. His research spans:
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Advanced power device concepts design and modelling: SiC MOSFETs, SJ MOSFETs, SJ IGBTs, JBS diodes, FinFETs, IGBTs, RC-IGBTs, and ultra-high-voltage device architectures (>10 kV).
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Ultra-wide-bandgap semiconductors for power electronics: diamond deep-depletion FETs, TMBS diodes, AlN FETs, Gallium Oxide, and hybrid diamond–SiC systems.
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Electro-thermal and reliability-aware modelling: dynamic compact SPICE oriented models, failure-mode analsysis and modelling (short-circuit robustness, surge current capability,UIS,etc.), thermal impedance extraction and modelling for advanced packaging concepts.
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TCAD-driven design and optimisation: process and device simulation, parasitic-aware optimisation, and physics-based performance trade-off analysis.
Research opportunities
Dr Donato welcomes PhD students, postdoctoral researchers, and visiting researchers interested in advanced power semiconductor devices, TCAD-based design, and experimental characterisation of WBG and UWBG technologies. Opportunities are available within UKRI- and EU-funded projects and in close collaboration with industrial partners. Prospective candidates and collaborators are encouraged to get in touch via email to discuss potential projects and funding routes.
Biography
Dr Nazareno Donato is an Assistant Research Professor at the University of Cambridge and Senior Power Device Engineer at Cambridge Microelectronics Ltd. His research focuses on advanced power semiconductor devices, with emphasis on wide- and ultra-wide-bandgap materials including SiC, GaN, and diamond. His work addresses the design, modelling, and experimental validation of high-voltage and high-reliability power devices, combining TCAD-driven optimisation with wafer-level and package-level characterisation. A key aspect of his research is the development of physics-based electro-thermal and reliability-aware models, capturing effects such as incomplete ionisation, channel mobility degradation, and transient failure mechanisms, and translating them into predictive compact models and manufacturable device concepts. Dr Donato leads and coordinates collaborative research at the interface of academia and industry within major UKRI and EU-funded projects, contributing to the development of SiC MOSFETs, IGBTs, FinFETs, and ultra-high-voltage device architectures, as well as emerging diamond-based power technologies. His research aims to accelerate the deployment of next-generation power electronics for energy, transport, and grid applications.
Department role and responsibilities